A novel doped broad band solar cell configuration for the optimization of photovoltaic performance for optimum conversion efficiency and fill factor

This paper presents the enhancement of photovoltaic performance through doped solar cell structure design configuration. The proposed solar cell configuration is designed with Mo/CsSn_xGe_(1-x)I₃/Zn_(1-y)Mg_yO/ZnO. The spectral current density and reflection–absorption transmission solar cell power parameters are studied with wavelength band variations. In our work, the carrier generation rate is simulated against the variations in solar cell substrate depth. Also, solar cell efficiency and fill factor are studied against both series resistance and shunt resistance. Furthermore, solar cell efficiency and fill factor, are clarified against back contact work function and temperature variations. The key performance parameters of the solar cell structure are demonstrated against Tin dopant ratio-based absorber layer. Moreover, the magnesium dopant ratio-based buffer layer is used to clarify the key performance parameters of solar cells. The study emphasizes the optimum solar cell performance key parameters with Tin based absorber layer and magnesium-based buffer layer dopant ratios of 0.3.