Investigation of possible front contact materials for efficient PV device using CIGS as an active layer

In this paper, a theoretical exploration of the device structure of CIGS-based solar cell has been performed. The main aim of the work is to examine how the different front contact materials such as ITO (Indium Tin Oxide), FTO (Fluorine Tin Oxide), AZO (Aluminum Zinc Oxide) affects the performance of CIGS-based solar cell. This study also examines how the Spiro-OMeTAD affects the performance of CIGS-based heterostructure solar cell when it is used as a HTL layer. The detailed analysis of the device is carried out using SCAPS-1D simulation software. Various parameters such as open-circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), Efficiency, series and shunt resistance, and working temperature are calculated. CIGS solar cell with ITO as a front contact and the use of Spiro-OMeTAD HTL gives an improved efficiency of 26.05%, similarly FTO as a front contact gives an efficiency of 25.28%, and AZO as a front contact gives an efficiency of 24.68%. This data reveals that that the ITO have been a good front contact material in regards to producing CIGS-based solar cell with high efficiency.