Effect of p-GaN layer and High-k material in InGaN/GaN LED for optical performance enhancement

The p-GaN layer adjacent to the quantum well is proposed for InGaN/GaN Light Emitting Diode (LED), it enhances the output optical power and internal quantum efficiency. The physical simulator Technology Computer-Aided Design (TCAD) is used to analyze the performance of the proposed LED. In the simulation, physics-based models are used to obtain optical properties such as luminous power and recombination rate. The suggested InGaN/GaN LED outperformed conventional LEDs in terms of internal quantum efficiency and luminous power. At the injection current of 700 mA, the output luminous power and internal quantum efficiency in the proposed LED are improved by 24% and 18%, respectively. Furthermore, the suggested InGaN/GaN LED has a smaller Auger recombination than conventional LEDs. Thus, the proposed p-GaN layer technique in GaN LED is a promising one for future solid-state lighting applications due to its high internal quantum efficiency of 90% at 100 mA injection current.