Data rates transmission, operation performance speed and figure of merit signature for various quadurature light sources under spectral and thermal effects

This study has demonstrated and simulated the data rates transmission, performance speed and figure of merit estimation and rise time control for various quadurature light sources under the spectral and thermal effects. The three light sources are tested that are namely indium arsenide aluminum antimony (InAsAlSb), Phosphide germanium silicon arsenide (PGeSiAs) and titanium aluminum indium arsenide (TiAlInAs). The light source 3-dB bandwidth, device rise time and the device resonance frequency are studied under the spectral and thermal effects. The light sources data rates, quantum efficiency and figure of merit are deeply measured under applied bias voltages and spectral/thermal variation effects. All the output power and applied bias voltages equations for the proposed light sources are studied and demonstrated clearly in this work. Required bias voltage, required injection current and the output lighted power are demonstrated for different proposed quadrature light sources versus thermal effects variations at the operating wavelength 1300 nm. Required bias voltage, required injection current and the output lighted power are clarified for different proposed quadrature light sources versus spectral wavelength effects variations at the room temperature 300 K. The 3-dB device frequency bandwidth (device performance operation speed), device rise time, and device data rates are measured for different proposed quadrature light sources versus thermal effects variations at the operating wavelength 1300 nm. Various proposed light sources minority carrier life time, quantum operation efficiency, light source figure of merit variations are studied clearly versus thermal effects variations at the operating wavelength 1300 nm.