Light emitting diodes based on carbon nanoparticles and Alq₃

The OI-LED device was fabricated using a combination of organic and inorganic semiconductors in multiple layers. This resulted has been improved generation of electroluminescence by incorporating carbon nanoparticles (with a size range of 20–40 nm) into materials such as poly (3, 4, -ethylene dioxythiophene) / polystyrene sulfonic acid (PEDOT: PSS), poly [(9, 9 – dioctylfluoreny l-2, 7- diyl)–co-(4, 4′-(N-(4-sec butylphenyl) diphenylamine)] (TFB and Tris (8-quinolinolato) aluminum(III) (Alq3). The fabrication process involved the use of spin coating technique and phase segregation method, which yielded thin film sample: (ITO/PEDOT: PSS/TFB/CNP/Alq3/AL). The electroluminescent properties of the OI-LED were investigated by interpreting the change resulting from applying different bias voltages 8, 9 and 10 V and the deposition of various organic layers at room temperature. The I-V curve clearly demonstrated the influence of the applied voltage on the knee voltages 1.7 V observed in sample. These characteristics enabled the OI-LED to emit a wide spectrum of light with wavelengths from 300 to 800 nm. It was calculated and studied color spaces by the Commission Internationale de l’Éclairage (Cie) 1931 system, and the correlated color temperature (CCT) of the device was found to range from 2000 to 3500 K.