Understanding of bandgap engineering in a 2D photonic structure for the realization of narrow white light

The present paper presents the engineering of photonic band of Gallium arsenide based 2D photonic crystal structure to realise the generation of a narrow white light. Gallium Arsenide (GaAs) cylindrical rod is grown in the air which acts as substrate or background materials. The principle of realization of a narrow bandwidth of white light at output end relies on the variation of lattice spacing of the structure as well as diameter of GaAs rod. Considering the bandgap engineering, both external and internal reflections are considered which is computed through plane wave expansion technique. Furthermore, the mechanism of this work is an interesting because the generation of white light is made with respect to the R-B-G which acts as input signal. The band gap analysis indicate that narrow effective area is found for generating he white light for low lattice spacing. It is also seen that the effective area decreases with the decreasing of lattice spacing. For example; the effective area (approximately) of 451.5 nm², 196 nm², 74 nm², 44.19 nm² and 11.9 nm² corresponding to the lattice spacing of 100 nm, 80 nm,60 nm, 40 nm and 20 nm respectively. To sum up, it is realised that the proposed GaAs based 2D photonic crystals structure could be a suitable candidate for generation of narrower white light.