Design of a pressure sensor based on the 1D ternary Octonacci photonic crystal configurations

In the current work, a design of extremely high performance pressure sensor is achieved using the photonic devices structure as (Bg₄/Oct₃/Bg₄), where Oct₃ represents the third generation of the quasi-regular Octonacci sequence and Bg₄ is taken as (ABC)⁴. Herein, the ternary photonic crystal consists layer A of Hg-1223 superconductor, the layer B as GaAs semiconductor and layer C as Silicon (Si), respectively. The transfer matrix method is used to analyses the transmission characteristics for the defect mode. Also, a blue shift is observed for defect mode. The present work shows a comparative investigation of the performance of the proposed designs such as (Oct₃/Bg₄/Oct₃) and (Bg₄/Oct₃/Bg₄). Herein, highlight a tangible impact of the external hydrostatic pressure on the performance of each sensor. A quantitative analysis of the sensitivity of the considered photonic devices is carried out. Furthermore, the findings of this work show a great impact of the sequence‘s order on the sensor performance. The outcomes of this paper prove that the sensitivity of the device (Oct₃/Bg₄/Oct₃) reaches 9.45 nm/GPa and with a simple conversion of the sequence‘s order the sensitivity of the photonic device (Bg₄/Oct₃/Bg₄) increases to 10.75 nm/GPa. The proposed novel device will be well-suited for development of the tunable multichannel filters, switches and bio-sensing applications. Moreover, this compact photonic device will be highly useful in the gas and biomolecule sensing fields.