Performance enhancement of OLED employing CuSCN interfacial layer
摘要
This research work outlines the effectiveness of multilayered organic light emitting diodes (OLEDs) that result in enhancement of performance of the device by incorporating a copper thiocyanate (CuSCN) interfacial layer, serving the dual purpose of facilitating hole-injection-layer and hole-transport-layer within the device. The CuSCN is used as a hole transport layer that lowered the drive voltage of OLED in the range of 1.0–1.5 V. Due to the exceptional properties of the CuSCN material, it offers distinct efficiency advantages. The upraised luminosity observed in OLEDs is attributed to a synergy between higher concentrations of electrons and holes within the emission layer. This occurrence corresponds to Langevin recombination in organic semiconductors, clarifying the process responsible for the increased luminosity. Incorporating the CuSCN layer in this investigation serves to amplify the abundant concentrations of electrons and holes in close proximity to the emission layer. The whole device behaviour is analyzed using the Silvaco Atlas tools, where, the parameters of device, including luminescent and current density are extracted. This research is precisely applicable for low-cost lighting and display applications.