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<p>The growing demand for high-efficiency power electronics in electric vehicles and advanced automotive systems has intensified research into ultra-wide bandgap (UWBG) semiconductors. This work presents a novel <InlineEquation ID="IEq7"> <EquationSource Format="TEX">\(\beta\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>β</mi> </math></EquationSource> </InlineEquation>-gallium oxide (<InlineEquation ID="IEq8"> <EquationSource Format="TEX">\(\beta\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>β</mi> </math></EquationSource> </InlineEquation>-Ga<InlineEquation ID="IEq9"> <EquationSource Format="TEX">\(_2\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>2</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>O<InlineEquation ID="IEq10"> <EquationSource Format="TEX">\(_3\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>3</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>)-based junctionless field-effect transistor (JLFET) with an optimized step gate oxide profile, designed to enhance high-power performance. By incorporating a thicker step gate oxide region, the proposed architecture significantly improves the breakdown voltage (BV) while maintaining critical electrical properties. Computer-aided two-dimensional technology design (2D TCAD) simulations are used to systematically evaluate the device’s performance against a conventional <InlineEquation ID="IEq11"> <EquationSource Format="TEX">\(\beta\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>β</mi> </math></EquationSource> </InlineEquation>-Ga<InlineEquation ID="IEq12"> <EquationSource Format="TEX">\(_2\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>2</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>O<InlineEquation ID="IEq13"> <EquationSource Format="TEX">\(_3\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>3</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation> JLFET. Specifically, the optimized structure achieves a maximum OFF-state breakdown voltage of 1677 V, with reasonable ON-state safe operating area representing a substantial improvement over conventional designs. These findings underscore the potential of step oxide-engineered <InlineEquation ID="IEq14"> <EquationSource Format="TEX">\(\beta\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>β</mi> </math></EquationSource> </InlineEquation>-Ga<InlineEquation ID="IEq15"> <EquationSource Format="TEX">\(_2\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>2</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>O<InlineEquation ID="IEq16"> <EquationSource Format="TEX">\(_3\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>3</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation> JLFETs as a viable solution for next-generation high-voltage, high-efficiency power electronic systems.</p>

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Investigation of breakdown voltage and safe operating area dependence on step gate oxide profile in \(\beta\)-Ga\(_2\)O\(_3\) junctionless field-effect transistors

  • 期刊论文

  • 发表日期：

    2025年11月17日

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  • V. R. Manukrishna,
  • K. S. Nikhil

摘要

The growing demand for high-efficiency power electronics in electric vehicles and advanced automotive systems has intensified research into ultra-wide bandgap (UWBG) semiconductors. This work presents a novel \(\beta\) β -gallium oxide ( \(\beta\) β -Ga \(_2\) 2 O \(_3\) 3 )-based junctionless field-effect transistor (JLFET) with an optimized step gate oxide profile, designed to enhance high-power performance. By incorporating a thicker step gate oxide region, the proposed architecture significantly improves the breakdown voltage (BV) while maintaining critical electrical properties. Computer-aided two-dimensional technology design (2D TCAD) simulations are used to systematically evaluate the device’s performance against a conventional \(\beta\) β -Ga \(_2\) 2 O \(_3\) 3 JLFET. Specifically, the optimized structure achieves a maximum OFF-state breakdown voltage of 1677 V, with reasonable ON-state safe operating area representing a substantial improvement over conventional designs. These findings underscore the potential of step oxide-engineered \(\beta\) β -Ga \(_2\) 2 O \(_3\) 3 JLFETs as a viable solution for next-generation high-voltage, high-efficiency power electronic systems.