A Novel Model for Copper Electroplating Process Simulation Minimizing Chemical Additives

This study aims to optimize the electroplating process used in the backend process of semiconductor manufacturing by developing a model that only uses suppressors utilized by electroplating additive manufacturers. Moreover, their effectiveness is investigated using the curvature-enhanced adsorbate coverage concept. The present study makes a significant contribution to the literature by presenting simulation results on the deposition of copper on a trench shape in an electroplating bath with suppressors, such as polyethylene glycol and Cl − . Based on the simulation findings, it can be inferred that the presence of voids in the trench depends on the electroplating additives that control the current density along the trench wall and that the intensity of the suppressor has a more dominant effect on the electroplating process. An electroplating experiment was conducted on a 12-inch wafer to verify the reliability of the simulation results, examining the concentration and strength of the suppressor relative to the presence or absence of voids. The experimental approach validates the credibility of the simulation results. Therefore, it is not necessary to utilize accelerators and levelers in semiconductor fabrication process, which simplifies the electroplating process and reduces the consumption of unnecessary chemicals to increase the sustainability of the manufacturing process.