Motion characteristics and periodic saw mark formation in electroplated diamond wire sawing of monocrystalline silicon wafers
摘要
Reciprocating electroplated diamond wire sawing (DWS) has become the dominant technique for slicing monocrystalline silicon ingots, where surface roughness serves as a critical indicator of wafer quality. This study systematically investigates the influence of key parameters—including wire speed, reciprocation period, feed rate, and roller lifespan—on the surface morphology of monocrystalline silicon wafers. Through detailed morphological observations and experimental analysis, the formation mechanisms of periodic saw marks are explored. The results reveal that surface roughness increases with wire speed, reciprocation period, and roller wear. Interestingly, the relationship between surface roughness and feed rate mirrors the stress–strain behavior of high-carbon steel. These findings provide new insights into the origin of saw marks in large-size wafers processed with ultra-fine electroplated diamond wires and support the optimization of slicing processes for high-efficiency photovoltaic applications.