<p>In this paper, the physical and chemical properties and application scenarios of SiC materials are introduced, and the research progress of its wafer processing technology is reviewed. Although the traditional consolidated diamond wire saw cutting and electrical discharge machining cutting have improved the surface roughness, total thickness variation and wafer warpage, the kerf width will still lead to the waste of SiC materials due to the material removal method. In view of this, this paper focuses on the breakthrough of ultra-short pulse laser stealth dicing technology, expounds its current situation, progress and application advantages, analyzes the research results and looks forward to the development direction, aiming to provide more abundant, efficient and accurate technical options for SiC material processing, and promote the technological innovation and market expansion of the semiconductor industry.</p>