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<p>A prediction model was proposed to estimate the etching rate of a high-aspect-ratio pattern. The etch rate is determined with ion energy, ion flux, ion energy transfer efficiency and neutral flux at the pattern bottom. We use molecular dynamics to predict the number and energy of ions reaching to the bottom by collecting the data of energy loss and angle change after side wall collision during the ion transport inside pattern hole. For neutrals, we use optical emission spectroscopy data to estimate the reaction constant and diffusivity with which we describe diffusional process of neutron transport. Finally, the simulation results of the etching rate were compared with the experiment, showing the prediction model in good agreement.</p>

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Prediction model of aspect ratio-dependent etching rate through molecular dynamics-based data processing

  • 期刊论文

  • 发表日期：

    2025年3月3日

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  • Junghwan Um,
  • Sunil Moon,
  • Sung-il Cho,
  • Keonwook Kang

摘要

A prediction model was proposed to estimate the etching rate of a high-aspect-ratio pattern. The etch rate is determined with ion energy, ion flux, ion energy transfer efficiency and neutral flux at the pattern bottom. We use molecular dynamics to predict the number and energy of ions reaching to the bottom by collecting the data of energy loss and angle change after side wall collision during the ion transport inside pattern hole. For neutrals, we use optical emission spectroscopy data to estimate the reaction constant and diffusivity with which we describe diffusional process of neutron transport. Finally, the simulation results of the etching rate were compared with the experiment, showing the prediction model in good agreement.