Scholarlink

<p>In this paper, we have studied the electrical excitation of plasma-wave in N-polar AlGaN/GaN high electron mobility transistors (HEMT) under asymmetric boundaries leads to terahertz emission. Numerical calculations are conducted through the simultaneous solution of Maxwell’s equations and the self-consistent hydrodynamic model. By employing this method, we solved the plasma-wave model in the channel of an N-polar AlGaN/GaN HEMT. We estimate that, under ideal boundary conditions and with sufficient channel mobility, these devices could generate milliwatts of power. The effects of different GaN channel layer thickness, carrier concentration, gate length and channel carrier velocity on plasma wave oscillation and terahertz radiation in N-polar AlGaN/GaN HEMT are considered. These simulation results based on Dyakonov–Shur instability provide guidance for the future design of high-radiation-power on-chip terahertz sources based on N-polar AlGaN/GaN HEMTs.</p> Graphical Abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年3月14日

查看全文
  • Runxian Xing,
  • Hongyang Guo,
  • Bohan Guo,
  • Guohao Yu,
  • Ping Zhang,
  • Jia’an Zhou,
  • An Yang,
  • Yu Li,
  • Chunfeng Hao,
  • Huixin Yue,
  • Zhongming Zeng,
  • Xinping Zhang,
  • Baoshun Zhang

摘要

In this paper, we have studied the electrical excitation of plasma-wave in N-polar AlGaN/GaN high electron mobility transistors (HEMT) under asymmetric boundaries leads to terahertz emission. Numerical calculations are conducted through the simultaneous solution of Maxwell’s equations and the self-consistent hydrodynamic model. By employing this method, we solved the plasma-wave model in the channel of an N-polar AlGaN/GaN HEMT. We estimate that, under ideal boundary conditions and with sufficient channel mobility, these devices could generate milliwatts of power. The effects of different GaN channel layer thickness, carrier concentration, gate length and channel carrier velocity on plasma wave oscillation and terahertz radiation in N-polar AlGaN/GaN HEMT are considered. These simulation results based on Dyakonov–Shur instability provide guidance for the future design of high-radiation-power on-chip terahertz sources based on N-polar AlGaN/GaN HEMTs.

Graphical Abstract