<p>This work investigates the parallel functioning of power semiconductor devices, specifically the influence of gate resistance and parasitic inductances in gallium nitride (GaN) devices. Paralleling semiconductor devices is a standard approach to increase the current-handling capacity of power electronics systems. While the paralleling of insulated gate bipolar transistors and silicon metal-oxide-semiconductor field-effect transistors <b>(</b>MOSFETs) has been widely studied and implemented in various situations, the distinct properties of wide band gap devices such as silicon carbide (SiC) and GaN introduce unique challenges and opportunities due to their faster switching characteristics. Despite extensive knowledge of SiC device parallel operation, there remains a considerable gap in understanding the parallel functioning of cascode GaN high-electron-mobility transistors. This study examines challenges associated with paralleling GaN MOSFETs and investigates the impact of gate resistance and parasitic inductance on the performance of paralleled discrete GaN devices, analyzing the consequences of both similar and differential gate resistances. It also evaluates the influence of current sharing under various configurations of parasitic inductances at the drain, source, and gate terminals, with findings supported by experimental validation. Overall, the study provides critical insights into optimizing the performance and reliability of parallel GaN devices for use in power electronics applications, such as inverters, converters, and motor drives.</p>