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<p>This article presents a multi-conversion mode temperature sensor exploiting channel length modulation coefficient <i>λ</i> of MOSFET. To achieve this an inverter interlaced cascaded delay cell (IICDC) and gated ring oscillator (GRO) having different channel lengths are used to design a temperature-to-time converter (TTC) followed by a time-to-digital converter (TDC). The proportional-to-absolute-temperature (PTAT) nature of the delay cells provides sharp changes in current ratio with temperature and so does the propagation delay ratio of the delay cells. This ensures change in temperature code with temperature shift. The programmability option in TTC allows the sensor to exhibit eight different resolution options using eight different conversion time modes. At 90-nm CMOS process, the layout area is 0.014&#xa0;mm<sup>2</sup> and the power is noted to be 148&#xa0;μW across the modes at 27°C and 0.8&#xa0;V supply voltage. This confirms an energy/conversion between 0.145 and 18.63&#xa0;nJ while the resolution is between 0.743°C and 0.0058°C over –60°C to 80°C. Eventually, the conversion time ranges between 0.982&#xa0;μs and 125.76 μs and a method is adopted to terminate the sensor working after each sampling is completed. The sensor can be used as a part of system-on-chip (SoC) for precise monitoring of the self-heating problems with multiple sampling rate options.</p>

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A multi-conversion mode time-domain temperature sensor in 90-nm CMOS

  • 期刊论文

  • 发表日期：

    2026年2月9日

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  • Kuntal Chakraborty,
  • Abir J Mondal

摘要

This article presents a multi-conversion mode temperature sensor exploiting channel length modulation coefficient λ of MOSFET. To achieve this an inverter interlaced cascaded delay cell (IICDC) and gated ring oscillator (GRO) having different channel lengths are used to design a temperature-to-time converter (TTC) followed by a time-to-digital converter (TDC). The proportional-to-absolute-temperature (PTAT) nature of the delay cells provides sharp changes in current ratio with temperature and so does the propagation delay ratio of the delay cells. This ensures change in temperature code with temperature shift. The programmability option in TTC allows the sensor to exhibit eight different resolution options using eight different conversion time modes. At 90-nm CMOS process, the layout area is 0.014 mm2 and the power is noted to be 148 μW across the modes at 27°C and 0.8 V supply voltage. This confirms an energy/conversion between 0.145 and 18.63 nJ while the resolution is between 0.743°C and 0.0058°C over –60°C to 80°C. Eventually, the conversion time ranges between 0.982 μs and 125.76 μs and a method is adopted to terminate the sensor working after each sampling is completed. The sensor can be used as a part of system-on-chip (SoC) for precise monitoring of the self-heating problems with multiple sampling rate options.