<p>A compact interdigital bandpass filter design using substrate integrated waveguide (SIW) is proposed. The design using fifth order bandpass filter with a center frequency of 3.55 GHz and a 3-dB bandwidth of 500 MHz, is analyzed for various transmission characteristics. The design is fabricated on RT Duroid5880 as substrate, having a thickness of 0.8 mm and a dielectric constant of 2.2. Various attributes of filter such as; transmission loss, return loss, group delay response, 3-dB fractional bandwidth, Quality factor and coupling coefficient are discussed. The designed filter is 5th order Chebyshev type which can be an appropriate choice for 5G frequency band due to its compact size. The design simulation is done using high frequency structure simulator (HFSS) which shows satisfactory results for <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="12046_2025_2778_Article_IEq1.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="24" /> </InlineMediaObject> <EquationSource Format="TEX">\(S_{11}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>S</mi> <mn>11</mn> </msub> </math></EquationSource> </InlineEquation> and <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="12046_2025_2778_Article_IEq2.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="24" /> </InlineMediaObject> <EquationSource Format="TEX">\(S_{21}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>S</mi> <mn>21</mn> </msub> </math></EquationSource> </InlineEquation> parameters.</p>

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Miniaturized SIW interdigital bandpass filter with unsymmetrical resonators for 5G

  • Shraddha Sood,
  • Vandana Niranjan,
  • Vibhav Sachan

摘要

A compact interdigital bandpass filter design using substrate integrated waveguide (SIW) is proposed. The design using fifth order bandpass filter with a center frequency of 3.55 GHz and a 3-dB bandwidth of 500 MHz, is analyzed for various transmission characteristics. The design is fabricated on RT Duroid5880 as substrate, having a thickness of 0.8 mm and a dielectric constant of 2.2. Various attributes of filter such as; transmission loss, return loss, group delay response, 3-dB fractional bandwidth, Quality factor and coupling coefficient are discussed. The designed filter is 5th order Chebyshev type which can be an appropriate choice for 5G frequency band due to its compact size. The design simulation is done using high frequency structure simulator (HFSS) which shows satisfactory results for \(S_{11}\) S 11 and \(S_{21}\) S 21 parameters.