Microwave-controlled cross-Kerr effect in an X-type atomic system
摘要
A five-level microwave-driven X-type scheme is used to study the influence of various field parameters on the absorption and nonlinear dispersion of probe light. In the proposed system, the cross-Kerr nonlinearity can be enhanced by optimum setting of the field strength and detunings. Our calculation reveals that the amplitude and position of the cross-Kerr peaks can be manipulated by tuning the microwave Rabi frequency and relative phase parameter. This proposed scheme has potential applications in the realm of multichannel quantum gates.