Structural, electronic and magnetic properties of pure and Fe-doped ZnSe: first-principles investigation

The physical properties of pure and defected ZnSe wurtzite systems were theoretically investigated. From the first-principle study, the wide band gap is 2.7 eV and ZnSe is a non-magnetic direct band-gap semiconductor. The ferromagnetic and antiferromagnetic states are also studied for Fe-doped ZnSe systems. Investigations show that adding iron and the presence of a single Zn vacancy defect leads to the magnetisation of ZnSe. The total energy calculations show that a ferromagnetic state is favourable when Zn is replaced with Fe. The ferromagnetic alignment in the Fe-doped ZnSe wurtzite compound allows it to be in high-spin and half-metallic states. In cases of Zn interstitial and Se vacancy defect in the ZnSe system does not lead to magnetisation. Defect formation energies and Curie temperature of Fe-doped ZnSe systems are estimated from ab-initio calculations.