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<p>Gallium nitride high-electron-mobility transistors (GaN HEMTs) have emerged as a prominent technology in advanced electronic systems. This review provides a concise overview of GaN HEMTs, including low-damage fabrication technologies, different HEMT device architectures, associated challenges, and major application areas. GaN HEMTs are semiconductor devices that employ gallium nitride as the active channel material, enabling operation at higher frequencies, voltages, and power levels than conventional silicon-based transistors. The distinctive material properties of GaN, including its wide bandgap, high electron mobility, and high breakdown voltage, contribute to the superior performance of GaN HEMTs. GaN HEMTs represent a transformative technology with broad applications in telecommunications, radar systems, wireless communication, and power electronics. Their exceptional electrical and thermal characteristics make them critical for the development of high-efficiency and high-performance electronic systems. Consequently, GaN HEMTs continue to drive technological advancements across multiple industries, supporting the next generation of compact, energy-efficient, and high-frequency electronic devices.</p>

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GaN HEMTs: Device architectures, analytical models, and applications in high power, high frequency, and sensing

  • 期刊论文

  • 发表日期：

    2026年6月22日

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  • M Nomitha Reddy,
  • Pratikhya Raut,
  • Deepak Kumar Panda,
  • Hmoud Al Dmour

摘要

Gallium nitride high-electron-mobility transistors (GaN HEMTs) have emerged as a prominent technology in advanced electronic systems. This review provides a concise overview of GaN HEMTs, including low-damage fabrication technologies, different HEMT device architectures, associated challenges, and major application areas. GaN HEMTs are semiconductor devices that employ gallium nitride as the active channel material, enabling operation at higher frequencies, voltages, and power levels than conventional silicon-based transistors. The distinctive material properties of GaN, including its wide bandgap, high electron mobility, and high breakdown voltage, contribute to the superior performance of GaN HEMTs. GaN HEMTs represent a transformative technology with broad applications in telecommunications, radar systems, wireless communication, and power electronics. Their exceptional electrical and thermal characteristics make them critical for the development of high-efficiency and high-performance electronic systems. Consequently, GaN HEMTs continue to drive technological advancements across multiple industries, supporting the next generation of compact, energy-efficient, and high-frequency electronic devices.