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<p>Here, we report the inclusion of graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) in bulk nanostructured bismuth telluride (Bi<sub>2</sub>Te<sub>3</sub>). The Bi<sub>2</sub>Te<sub>3</sub>-based g-C<sub>3</sub>N<sub>4</sub> nanocomposites were synthesized through a scalable and cost-effective powder processing technique, and their thermoelectric properties were tuned by regulating the wt% of g-C<sub>3</sub>N<sub>4</sub> in the Bi<sub>2</sub>Te<sub>3</sub> matrix. The incoherent interfaces formed between g-C<sub>3</sub>N<sub>4</sub> nanosheets and Bi<sub>2</sub>Te<sub>3</sub> grains act as a potential barrier to induce a carrier filtering effect, which substantially changes the electrical transport properties of the material. We obtained a tripled power factor of 3.1&#xa0;mW&#xa0;m<sup>–1</sup>&#xa0;K<sup>–2</sup> for the BT0.5CN sample (Bi<sub>2</sub>Te<sub>3</sub> + 0.5 wt% g-C<sub>3</sub>N<sub>4</sub>) compared to that of pristine Bi<sub>2</sub>Te<sub>3</sub>. The observed reduction in thermal conductivity can be ascribed to the enhanced scattering of phonons at increased boundaries of nano grains and at the incoherent interfaces introduced by added g-C<sub>3</sub>N<sub>4</sub>. With synergistic optimization of power factor and suppressed thermal conductivity, <i>ZT</i> culminates in a peak value of 0.57 for the sample BT0.5CN at 450 K.</p>

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Enhanced thermoelectric performance of g-C3N4/Bi2Te3 nanocomposites through simultaneous modulation of electronic and thermal carrier transport

  • 期刊论文

  • 发表日期：

    2026年5月6日

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  • P Shyni,
  • P P Pradyumnan,
  • P Rajasekar,
  • Aswathy M Narayanan,
  • Arun M Umarji

摘要

Here, we report the inclusion of graphitic carbon nitride (g-C3N4) in bulk nanostructured bismuth telluride (Bi2Te3). The Bi2Te3-based g-C3N4 nanocomposites were synthesized through a scalable and cost-effective powder processing technique, and their thermoelectric properties were tuned by regulating the wt% of g-C3N4 in the Bi2Te3 matrix. The incoherent interfaces formed between g-C3N4 nanosheets and Bi2Te3 grains act as a potential barrier to induce a carrier filtering effect, which substantially changes the electrical transport properties of the material. We obtained a tripled power factor of 3.1 mW m–1 K–2 for the BT0.5CN sample (Bi2Te3 + 0.5 wt% g-C3N4) compared to that of pristine Bi2Te3. The observed reduction in thermal conductivity can be ascribed to the enhanced scattering of phonons at increased boundaries of nano grains and at the incoherent interfaces introduced by added g-C3N4. With synergistic optimization of power factor and suppressed thermal conductivity, ZT culminates in a peak value of 0.57 for the sample BT0.5CN at 450 K.