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<p>In this study, pentacene-doped TPD (4,4′-bis[N-(3-methylphenyl)-N-phenylamino] biphenyl) thin films were fabricated using a spin-coating technique for the successful development and characterization of OLED (organic light-emitting diode) devices. A comparative analysis was conducted between doped and undoped organic layers, revealing that a 12% pentacene doping level offers the best device performance. Further optimization of the light-emitting region was performed by incorporating tris[2-(p-tolyl)pyridine]iridium (III), Ir(mppy)<sub>3</sub>, at varying doping concentrations. With this optimized device structure, we achieved a maximum current efficiency of 13.3 cd A<sup>–1</sup> on an FTO (fluorine-doped tin oxide) substrate, along with improved operational stability. Comprehensive characterization was carried out through J–V (current density–voltage), L–V (luminance–voltage) and efficiency measurements. Additionally, the optical transmittance of the pentacene-doped TPD films and the surface morphology of FTO and FTO with pentacene-doped TPD were examined using FE-SEM (field emission scanning electron microscope) imaging. Overall, the findings provide insight into the influence of optimized doping levels in the HIL (hole injection layer) relative to the HTL (hole transport layer) and EML (emissive layer), contributing to improved OLED performance and device understanding.</p>

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Fabrication of solution-processed pentacene-doped N,N-bis(3-methylphenyl)-N,N(phenyl)-benzidine (TPD) thin film-based organic light-emitting diode with optimized (8-hydroxy quinolinato) aluminium (Alq3) region

  • 期刊论文

  • 发表日期：

    2026年4月28日

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  • Dhrubajyoti Saikia,
  • Ranjit Sarma

摘要

In this study, pentacene-doped TPD (4,4′-bis[N-(3-methylphenyl)-N-phenylamino] biphenyl) thin films were fabricated using a spin-coating technique for the successful development and characterization of OLED (organic light-emitting diode) devices. A comparative analysis was conducted between doped and undoped organic layers, revealing that a 12% pentacene doping level offers the best device performance. Further optimization of the light-emitting region was performed by incorporating tris[2-(p-tolyl)pyridine]iridium (III), Ir(mppy)3, at varying doping concentrations. With this optimized device structure, we achieved a maximum current efficiency of 13.3 cd A–1 on an FTO (fluorine-doped tin oxide) substrate, along with improved operational stability. Comprehensive characterization was carried out through J–V (current density–voltage), L–V (luminance–voltage) and efficiency measurements. Additionally, the optical transmittance of the pentacene-doped TPD films and the surface morphology of FTO and FTO with pentacene-doped TPD were examined using FE-SEM (field emission scanning electron microscope) imaging. Overall, the findings provide insight into the influence of optimized doping levels in the HIL (hole injection layer) relative to the HTL (hole transport layer) and EML (emissive layer), contributing to improved OLED performance and device understanding.