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<p>Ferroelectric thin films hold potential for non-volatile memory applications due to their inherent polarization. Barium titanate (BaTiO<sub>3</sub>) is noted for its high dielectric constant and low loss. This work reports the modulation of resistive switching in BaTiO<sub>3</sub> under dark and illuminated conditions. A polycrystalline thin film of pristine BaTiO<sub>3</sub> (BTO) was fabricated on an FTO substrate using the spin-coating technique. The Al/BTO/FTO device illustrates a tetragonal phase with a film thickness of 300 nm. The energy band gap of BTO is found to be 3.6&#xa0;eV. The current–voltage (I-V) data shows the resistive switching behavior of the BTO thin film under dark and light conditions, making it suitable for future opto-memristor devices. This Al/BTO/FTO device was tested for endurance and retention performance with and without illumination; it shows stability up to 500&#xa0;cycles and 5000&#xa0;s, respectively. The Al/BTO/FTO device can be useful in non-volatile resistive random-access memory (ReRAM).</p>

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Opto-memristive behavior in BaTiO3 thin films: Tuning resistive switching for advanced memory applications

  • 期刊论文

  • 发表日期：

    2026年3月5日

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  • Parveen Sheoran,
  • Chandmare Vaishali Prabhakarrao,
  • Kusum Kumari,
  • Vinay S Palaparthy,
  • Hitesh Borkar

摘要

Ferroelectric thin films hold potential for non-volatile memory applications due to their inherent polarization. Barium titanate (BaTiO3) is noted for its high dielectric constant and low loss. This work reports the modulation of resistive switching in BaTiO3 under dark and illuminated conditions. A polycrystalline thin film of pristine BaTiO3 (BTO) was fabricated on an FTO substrate using the spin-coating technique. The Al/BTO/FTO device illustrates a tetragonal phase with a film thickness of 300 nm. The energy band gap of BTO is found to be 3.6 eV. The current–voltage (I-V) data shows the resistive switching behavior of the BTO thin film under dark and light conditions, making it suitable for future opto-memristor devices. This Al/BTO/FTO device was tested for endurance and retention performance with and without illumination; it shows stability up to 500 cycles and 5000 s, respectively. The Al/BTO/FTO device can be useful in non-volatile resistive random-access memory (ReRAM).