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<p>The indium-free transparent conductive SnO<sub>2</sub>:Mo/Ag/SnO<sub>2</sub>:Mo tri-layer films were prepared by magnetron sputtering at room temperature for the first time, and the mechanism of the effect of Ag layer thickness on the properties of tri-layer films was systematically investigated. The results showed that the change of the morphology of Ag layer caused by the Ag layer thickness is the main factor for determining the optical and electrical properties of the SnO<sub>2</sub>:Mo/Ag/SnO<sub>2</sub>:Mo film. Moreover, the optical properties of the tri-layer film can be significantly optimized by adjusting the SnO<sub>2</sub>:Mo layer thickness. The tri-layer films with the Ag layer thickness of 7 nm and SnO<sub>2</sub>:Mo layer thickness of 40 nm exhibited optimum properties, with a maximum figure of merit of 2.5 × 10<sup>−2</sup> Ω<sup>−1</sup>, a high visible light transparency of 84% and a low sheet resistance of 7 Ω/sq, and excellent mechanical flexibility. In addition, the application potential of the SnO<sub>2</sub>:Mo/Ag/SnO<sub>2</sub>:Mo electrodes were also demonstrated in the thin film transistor device.</p>

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Study on indium-free SnO2:Mo/Ag/SnO2:Mo multilayer transparent conducting electrode prepared by magnetron sputtering at room temperature

  • 期刊论文

  • 发表日期：

    2026年1月7日

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  • Min Su,
  • Lan Yue,
  • Fanxin Meng

摘要

The indium-free transparent conductive SnO2:Mo/Ag/SnO2:Mo tri-layer films were prepared by magnetron sputtering at room temperature for the first time, and the mechanism of the effect of Ag layer thickness on the properties of tri-layer films was systematically investigated. The results showed that the change of the morphology of Ag layer caused by the Ag layer thickness is the main factor for determining the optical and electrical properties of the SnO2:Mo/Ag/SnO2:Mo film. Moreover, the optical properties of the tri-layer film can be significantly optimized by adjusting the SnO2:Mo layer thickness. The tri-layer films with the Ag layer thickness of 7 nm and SnO2:Mo layer thickness of 40 nm exhibited optimum properties, with a maximum figure of merit of 2.5 × 10−2 Ω−1, a high visible light transparency of 84% and a low sheet resistance of 7 Ω/sq, and excellent mechanical flexibility. In addition, the application potential of the SnO2:Mo/Ag/SnO2:Mo electrodes were also demonstrated in the thin film transistor device.