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<p>In this study, a novel aligned hierarchical Zn(OH)<sub>2</sub>/GaN heterostructure was fabricated at low temperature through a solution-based approach, offering a promising strategy for anisotropic ultraviolet (UV) photodetection. The structure consists of vertically aligned two-dimensional Zn(OH)<sub>2</sub> nanosheets grown epitaxially on a lateral epitaxial overgrowth uncoalesced GaN film. Photoresponse measurements reveal an excellent photoresponse performance with anisotropic photoresponse properties. This anisotropy stems from the directional charge transport pathways facilitated by the aligned Zn(OH)<sub>2</sub> nanosheet/uncoalesced GaN structure. These findings provide a new method to design high-performance UV detection sensors based on GaN grown using lateral epitaxy.</p>

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Aligned hierarchical Zn(OH)2/GaN heterostructure grown on grooved sapphire for UV detection

  • 期刊论文

  • 发表日期：

    2025年7月16日

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  • Sitong Liu,
  • Lanfeng Li,
  • Shuyi Yang,
  • Yaowen Xu,
  • Naisen Yu,
  • Hongyu Fu

摘要

In this study, a novel aligned hierarchical Zn(OH)2/GaN heterostructure was fabricated at low temperature through a solution-based approach, offering a promising strategy for anisotropic ultraviolet (UV) photodetection. The structure consists of vertically aligned two-dimensional Zn(OH)2 nanosheets grown epitaxially on a lateral epitaxial overgrowth uncoalesced GaN film. Photoresponse measurements reveal an excellent photoresponse performance with anisotropic photoresponse properties. This anisotropy stems from the directional charge transport pathways facilitated by the aligned Zn(OH)2 nanosheet/uncoalesced GaN structure. These findings provide a new method to design high-performance UV detection sensors based on GaN grown using lateral epitaxy.