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<p>Conventional phase-change memory (PCM) technologies are constrained by excessive power requirements, resistance instability, and variability across devices. The study presents an electrothermal simulation of a hybrid PCM architecture based on germanium–antimony–tellurium Ge<sub>4</sub>Sb<sub>6</sub>Te<sub>7</sub> (GST467), in which thermally induced phase transition is coupled with ionic transport, governed by a crystallization temperature threshold. In contrast to the widely adopted Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST225), GST467 offers improved thermal robustness and elevated crystallization temperature, leading to enhanced resistance stability. The hybrid device exhibits autonomous switching behavior resulting from the interplay between temperature-dependent phase-change conduction at higher thermal regimes and electric-field-assisted ionic migration at lower temperatures, enabling the formation of reliable conductive channels. A filament regulation strategy is incorporated to precisely control ion transport, thereby suppressing stochastic filament growth and ensuring stable multilevel resistance operation. Numerical simulations performed using MATLAB R2023b demonstrate nearly a 90.00% suppression in resistance drift and an endurance beyond 10<sup>8</sup> switching cycles, indicating a substantial improvement over conventional PCM implementations. The electro-ionic model parameters are derived from experimentally reported GST467 and carbon nanotube-based devices, ensuring physical realism and practical applicability.</p>

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Hybrid Phase Change/Ionic Device Reliability and Variability Under Thermal–Electrostatic Control

  • 期刊论文

  • 发表日期：

    2026年5月27日

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  • Vikas Bhatnagar,
  • Adesh Kumar,
  • Manish H. Bilgaye

摘要

Conventional phase-change memory (PCM) technologies are constrained by excessive power requirements, resistance instability, and variability across devices. The study presents an electrothermal simulation of a hybrid PCM architecture based on germanium–antimony–tellurium Ge4Sb6Te7 (GST467), in which thermally induced phase transition is coupled with ionic transport, governed by a crystallization temperature threshold. In contrast to the widely adopted Ge2Sb2Te5 (GST225), GST467 offers improved thermal robustness and elevated crystallization temperature, leading to enhanced resistance stability. The hybrid device exhibits autonomous switching behavior resulting from the interplay between temperature-dependent phase-change conduction at higher thermal regimes and electric-field-assisted ionic migration at lower temperatures, enabling the formation of reliable conductive channels. A filament regulation strategy is incorporated to precisely control ion transport, thereby suppressing stochastic filament growth and ensuring stable multilevel resistance operation. Numerical simulations performed using MATLAB R2023b demonstrate nearly a 90.00% suppression in resistance drift and an endurance beyond 108 switching cycles, indicating a substantial improvement over conventional PCM implementations. The electro-ionic model parameters are derived from experimentally reported GST467 and carbon nanotube-based devices, ensuring physical realism and practical applicability.