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<p>This study examines the effects of O<sub>2</sub> and CF<sub>4</sub> plasma treatment on the surface morphology, structural, optical, and hydrophilic properties of single-crystal muscovite mica. X-ray diffraction reveals degradation of crystallographic order arising from plasma-induced defects. SEM analysis shows that prolonged O<sub>2</sub> plasma exposure produces nanoscale etch holes, while CF<sub>4</sub> plasma treatment generates both etch holes and etched nanocrystalline features, particularly at higher plasma power. Vibrational spectroscopy indicates defect- and disorder-related modifications in the silicate bonding environment. Optical measurements reveal a monotonic increase in the band gap for O<sub>2</sub> plasma-treated mica, whereas CF<sub>4</sub> plasma treatment results in a non-monotonic band gap variation. Mechanistically, O<sub>2</sub> plasma induces surface-limited oxidation and defect-mediated etching, while CF<sub>4</sub> plasma causes aggressive fluorination, interlayer disruption, and re-deposition, leading to extensive surface roughening.</p>

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Plasma-Induced Nanostructuring Drives Modification of Structural, Optical, and Hydrophilic Properties in Muscovite Mica

  • 期刊论文

  • 发表日期：

    2026年3月30日

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  • Muhammad Sabbtain Abbas,
  • Naeema Naeem,
  • Muhammad Hamza,
  • Muhammad Javaid Iqbal,
  • Saqlain Yousuf

摘要

This study examines the effects of O2 and CF4 plasma treatment on the surface morphology, structural, optical, and hydrophilic properties of single-crystal muscovite mica. X-ray diffraction reveals degradation of crystallographic order arising from plasma-induced defects. SEM analysis shows that prolonged O2 plasma exposure produces nanoscale etch holes, while CF4 plasma treatment generates both etch holes and etched nanocrystalline features, particularly at higher plasma power. Vibrational spectroscopy indicates defect- and disorder-related modifications in the silicate bonding environment. Optical measurements reveal a monotonic increase in the band gap for O2 plasma-treated mica, whereas CF4 plasma treatment results in a non-monotonic band gap variation. Mechanistically, O2 plasma induces surface-limited oxidation and defect-mediated etching, while CF4 plasma causes aggressive fluorination, interlayer disruption, and re-deposition, leading to extensive surface roughening.