<p>Cadmium telluride (CdTe) is an important II-VI semiconducting material used in many applications, where its use as an absorber layer in CdTe-based solar cells is well known. In this work, sodium-doped cadmium telluride (CdTe:Na) thin films were prepared on glass substrates using the spray pyrolysis (SP) method at a substrate temperature T<sub>s</sub> = 300°C. Some films were etched with potassium hydroxide (KOH) or cadmium chloride (CdCl<sub>2</sub>) in methanol, while other films remained as deposited. The films were characterized using x-ray diffraction (XRD), UV-Vis spectroscopy, and current-voltage (I-V) plots. The XRD pattern showed that the films are polycrystalline with a mixed phase (cubic and hexagonal), but it also contained peaks attributable to unintentionally formed CdTeO3, as the films were exposed to air during cooling to room temperature and during characterization. The transmittance was measured at room temperature and used to deduce absorbance and the second derivative of absorbance. The curves are discussed, and peaks in the second derivative are interpreted. The I-V plots of the films revealed that the contacts are quasi-ohmic; therefore, linear fits were performed to estimate resistance and get resistivity. It was found that resistivity decreased after KOH in methanol etching and decreased further after CdCl<sub>2</sub> in methanol etching.</p>

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Sodium-Doped Cadmium Telluride (CdTe:Na) Thin Films Prepared by the Spray Pyrolysis Method

  • Shadia J. Ikhmayies

摘要

Cadmium telluride (CdTe) is an important II-VI semiconducting material used in many applications, where its use as an absorber layer in CdTe-based solar cells is well known. In this work, sodium-doped cadmium telluride (CdTe:Na) thin films were prepared on glass substrates using the spray pyrolysis (SP) method at a substrate temperature Ts = 300°C. Some films were etched with potassium hydroxide (KOH) or cadmium chloride (CdCl2) in methanol, while other films remained as deposited. The films were characterized using x-ray diffraction (XRD), UV-Vis spectroscopy, and current-voltage (I-V) plots. The XRD pattern showed that the films are polycrystalline with a mixed phase (cubic and hexagonal), but it also contained peaks attributable to unintentionally formed CdTeO3, as the films were exposed to air during cooling to room temperature and during characterization. The transmittance was measured at room temperature and used to deduce absorbance and the second derivative of absorbance. The curves are discussed, and peaks in the second derivative are interpreted. The I-V plots of the films revealed that the contacts are quasi-ohmic; therefore, linear fits were performed to estimate resistance and get resistivity. It was found that resistivity decreased after KOH in methanol etching and decreased further after CdCl2 in methanol etching.