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<p>The present work deals with two striking 2D materials possessing contrary features and enormous technological perspectives: graphene and h-BN. Graphene attains a tensile strength of 125 GPa and an elasticity modulus of 1.1 TPa. Various methods have been adopted for the synthesis of graphene, including CVD and mechanical exfoliation. It reaches a high thermal conductivity of 5300 W/m&#xa0;K, with a specific surface area of 2630 m<sup>2</sup>/g. With its high carrier mobility of 2 × 10<sup>5</sup> cm<sup>2</sup>/V&#xa0;s, it enables advanced nanoelectronics and energy storage. Hexagonal boron nitride is an insulating member with a band gap of ~ 5.5&#xa0;eV. It has a very high thermal conductivity of 600–1000 W/m&#xa0;K and is stable up to 2000°C in inert conditions, synthesized by the CVD method, retains excellent structural integrity, and presents high dielectric strength in the range of 30–40&#xa0;kV/mm, which renders it an ideal material for applications such as electronic insulation at high temperatures. This review underlines the potential synergy of graphene and h-BN for future applications in nanotechnology, semiconductors, and biomedicine.</p>

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A Review on Synthesis Methods, Structures, Properties and Potential Applications of Graphene and Hexagonal Boron Nitride

  • 期刊论文

  • 发表日期：

    2025年10月30日

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  • Arka Ghosh,
  • Bappa Das,
  • Pankaj Shrivastava,
  • Parth Patel,
  • Ghananshu Patil,
  • Syed Nasimul Alam,
  • Anuj Rajoriya,
  • Sushovan Basak

摘要

The present work deals with two striking 2D materials possessing contrary features and enormous technological perspectives: graphene and h-BN. Graphene attains a tensile strength of 125 GPa and an elasticity modulus of 1.1 TPa. Various methods have been adopted for the synthesis of graphene, including CVD and mechanical exfoliation. It reaches a high thermal conductivity of 5300 W/m K, with a specific surface area of 2630 m2/g. With its high carrier mobility of 2 × 105 cm2/V s, it enables advanced nanoelectronics and energy storage. Hexagonal boron nitride is an insulating member with a band gap of ~ 5.5 eV. It has a very high thermal conductivity of 600–1000 W/m K and is stable up to 2000°C in inert conditions, synthesized by the CVD method, retains excellent structural integrity, and presents high dielectric strength in the range of 30–40 kV/mm, which renders it an ideal material for applications such as electronic insulation at high temperatures. This review underlines the potential synergy of graphene and h-BN for future applications in nanotechnology, semiconductors, and biomedicine.