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<p>During the use of cables, the external stress and irradiation damage the internal structure of the cable sheath, resulting in the deterioration of the insulation properties and mechanical properties of the material. Under the action of external stress, the cable sheath may produce micro-cracks and insulation deformation. Irradiation breaks the molecular chain of the cable material, causes cross-linking damage, and accelerates the decrease of the insulation characteristics and mechanical strength of the sheath. In this paper, the wide band gap semiconductor SiC is doped into XLPE, and the surface of SiC is treated with silane coupling agent to improve its dispersion. SiC has a wide band gap and the ability of surface defects to capture electrons, which slows the bombardment of carriers, enhances the electrical insulation characteristics of the material, and also greatly improves its resistance to radiation damage. The results show that, when the SiC content is 1.5&#xa0;wt.%, the tensile strength and breakdown field strength of the composites are the largest, at 22.7&#xa0;MPa and 28&#xa0;KV/mm, respectively. At this time, compared with pure XLPE, the insulation characteristics and mechanical properties of 1.5&#xa0;wt.% SiC/XLPE composites are less degraded under different irradiation doses. When the doping amount of SiC is 1.5&#xa0;wt.%, the doping concentration is the best. At this concentration, the best anti-radiation value is 100&#xa0;kGy. Through X-ray photoelectron spectroscopy (XP) analysis, this study reveals the mechanism of radiation aging resistance behind SiC-doped XLPE. In this study, wide band gap semiconductor silicon carbide was selected as the filler, and different content of silicon carbide was added to cross-linked polyethylene. Compared with the undoped control sample, the incorporation of silicon carbide significantly improves the insulation performance and tensile strength of the composite material. The effects of radiation on the insulation properties of cross-linked polyethylene before and after doping were investigated by measuring the breakdown strength, dielectric constant, dielectric loss, and volume resistivity of the composites at different radiation doses. The tensile strength and elongation at break of the material before and after doping at different radiation doses were measured to explore the effect of radiation on its mechanical properties. The change mechanism of dielectric properties of silicon carbide nanocomposites before and after irradiation is proposed by changing the mechanical properties, breakdown characteristics, dielectric constant, and loss of silicon carbide nanocomposites before and after irradiation. This study realizes the simultaneous enhancement of insulation and radiation resistance of cable materials, which is of great value for prolonging cable life.</p>

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Wide Band Gap Semiconductor SiC/XLPE Insulation Composites Based on Radiation Damage Suppression

  • 期刊论文

  • 发表日期：

    2025年10月17日

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  • Weiyu Wang,
  • Yi Jin,
  • Xin Song

摘要

During the use of cables, the external stress and irradiation damage the internal structure of the cable sheath, resulting in the deterioration of the insulation properties and mechanical properties of the material. Under the action of external stress, the cable sheath may produce micro-cracks and insulation deformation. Irradiation breaks the molecular chain of the cable material, causes cross-linking damage, and accelerates the decrease of the insulation characteristics and mechanical strength of the sheath. In this paper, the wide band gap semiconductor SiC is doped into XLPE, and the surface of SiC is treated with silane coupling agent to improve its dispersion. SiC has a wide band gap and the ability of surface defects to capture electrons, which slows the bombardment of carriers, enhances the electrical insulation characteristics of the material, and also greatly improves its resistance to radiation damage. The results show that, when the SiC content is 1.5 wt.%, the tensile strength and breakdown field strength of the composites are the largest, at 22.7 MPa and 28 KV/mm, respectively. At this time, compared with pure XLPE, the insulation characteristics and mechanical properties of 1.5 wt.% SiC/XLPE composites are less degraded under different irradiation doses. When the doping amount of SiC is 1.5 wt.%, the doping concentration is the best. At this concentration, the best anti-radiation value is 100 kGy. Through X-ray photoelectron spectroscopy (XP) analysis, this study reveals the mechanism of radiation aging resistance behind SiC-doped XLPE. In this study, wide band gap semiconductor silicon carbide was selected as the filler, and different content of silicon carbide was added to cross-linked polyethylene. Compared with the undoped control sample, the incorporation of silicon carbide significantly improves the insulation performance and tensile strength of the composite material. The effects of radiation on the insulation properties of cross-linked polyethylene before and after doping were investigated by measuring the breakdown strength, dielectric constant, dielectric loss, and volume resistivity of the composites at different radiation doses. The tensile strength and elongation at break of the material before and after doping at different radiation doses were measured to explore the effect of radiation on its mechanical properties. The change mechanism of dielectric properties of silicon carbide nanocomposites before and after irradiation is proposed by changing the mechanical properties, breakdown characteristics, dielectric constant, and loss of silicon carbide nanocomposites before and after irradiation. This study realizes the simultaneous enhancement of insulation and radiation resistance of cable materials, which is of great value for prolonging cable life.