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<p>Single crystals of pristine L-alanine alaninium nitrate (LAAN) and its lanthanum oxide (La<sub>2</sub>O<sub>3</sub>)-doped derivatives were synthesized using the slow evaporation solution growth method under ambient conditions. The mechanical stability of these crystals was verified through Vickers hardness testing. Comprehensive analysis of the dielectric properties was conducted over a frequency range of 20 to 10<sup>6</sup>&#xa0;Hz and a temperature span from 30 to 90°C. Many parameters, such as dielectric loss (tan<i>δ</i>), dielectric constant (<i>ε</i><sub>r</sub>), and AC conductivity (<i>σ</i><sub>ac</sub>), exhibited an upward trend with rising temperatures and doping concentration. Additionally, DC electrical conductivity (<i>σ</i><sub>DC</sub>) measurements were performed between 27 and 110°C, allowing for the determination of activation energies (<i>E</i><sub>a</sub>). Thermal stability assessments through thermogravimetric analysis (TGA) and differential thermal analysis (DTA) revealed enhanced melting points and thermal resilience in the doped crystals compared to their pure counterparts. These findings suggest potential applications in fields requiring materials with robust thermal stability and tailored electrical properties, such as electronic devices, sensors, or advanced optoelectronic systems.</p>

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Improving the Physical Properties of L-Alanine Alaninium Nitrate (LAAN) Nonlinear Optical Single Crystals Through the Doping of La2O3 Impurities

  • 期刊论文

  • 发表日期：

    2025年8月19日

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  • M. A. Ahlam,
  • Abduelwhab B. Alwany,
  • Yahya Alajlani,
  • Ali Alnakhlani,
  • Adnan Alnehia,
  • Mohammed A. Algradee

摘要

Single crystals of pristine L-alanine alaninium nitrate (LAAN) and its lanthanum oxide (La2O3)-doped derivatives were synthesized using the slow evaporation solution growth method under ambient conditions. The mechanical stability of these crystals was verified through Vickers hardness testing. Comprehensive analysis of the dielectric properties was conducted over a frequency range of 20 to 106 Hz and a temperature span from 30 to 90°C. Many parameters, such as dielectric loss (tanδ), dielectric constant (εr), and AC conductivity (σac), exhibited an upward trend with rising temperatures and doping concentration. Additionally, DC electrical conductivity (σDC) measurements were performed between 27 and 110°C, allowing for the determination of activation energies (Ea). Thermal stability assessments through thermogravimetric analysis (TGA) and differential thermal analysis (DTA) revealed enhanced melting points and thermal resilience in the doped crystals compared to their pure counterparts. These findings suggest potential applications in fields requiring materials with robust thermal stability and tailored electrical properties, such as electronic devices, sensors, or advanced optoelectronic systems.