Homogeneous Growth of 3C-SiC Crystal Surface at Solid–Liquid Interface and Its Competitive Relationship

Silicon carbide (SiC) plays a vital role in devices used in several fields, such as communications, displays, and lighting. The quality of SiC growth is critical to the fabrication of high-performance SiC devices; thus, it is important to explore its growth mechanism. Herein, we used approaches based on molecular dynamics to simulate the induced crystallization process of 3C-SiC crystal based on a solid–liquid model. In addition, we proposed an expression for the degree of nonuniform crystal growth, allowing us to dynamically and quantitatively describe the crystal growth process. The results show that the crystal growth quality is unsatisfactory at low temperatures, with a high defect density and uneven growth of crystal faces. In addition, the process of SiC crystal growth generates rival growth patterns across each crystal growth direction, with the crystal preferentially proliferating along the direction with relatively lower growth competition. Although the system exhibits dislocation and void defects, the number of these defects exhibits opposing trends during relaxation. In addition, as crystal faces grow progressively, the process involving the filling of concave surfaces with crystal atoms is gradually transferred to the amorphous gaps within the system. Finally, this study provides insights into the formation of SiC crystal.