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<p>This study begins with the fabrication and simulation of high-performance back-illuminated AlGaN-based solar-blind ultraviolet (UV) photodetectors. Based on the photodetectors, a low-noise, high-gain UV detection system circuit is designed and fabricated, enabling the detection, acquisition, and calibration of weak solar-blind UV signals. Experimental results demonstrate that under zero bias conditions, with a UV light power density of 3.45 µW/cm<sup>2</sup> at 260 nm, the sample achieves a peak responsivity (<i>R</i>) of 0.085 A·W<sup>−1</sup>, an external quantum efficiency (<i>EQE</i>) of 40.7%, and a detectivity (<i>D</i>*) of 7.46×10<sup>12</sup> cm·Hz<sup>1/2</sup>·W<sup>−1</sup>. The system exhibits a bandpass characteristic within the 240–280 nm wavelength range, coupled with a high signal-to-noise ratio (<i>SNR</i>) of 39.74 dB.</p>

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Characterization of high-performance AlGaN-based solar-blind UV photodetectors

  • 期刊论文

  • 发表日期：

    2025年6月9日

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  • Yuting Fu,
  • Bing Liu,
  • Jie Zhan,
  • Fu Zheng,
  • Zhaolan Sun

摘要

This study begins with the fabrication and simulation of high-performance back-illuminated AlGaN-based solar-blind ultraviolet (UV) photodetectors. Based on the photodetectors, a low-noise, high-gain UV detection system circuit is designed and fabricated, enabling the detection, acquisition, and calibration of weak solar-blind UV signals. Experimental results demonstrate that under zero bias conditions, with a UV light power density of 3.45 µW/cm2 at 260 nm, the sample achieves a peak responsivity (R) of 0.085 A·W−1, an external quantum efficiency (EQE) of 40.7%, and a detectivity (D*) of 7.46×1012 cm·Hz1/2·W−1. The system exhibits a bandpass characteristic within the 240–280 nm wavelength range, coupled with a high signal-to-noise ratio (SNR) of 39.74 dB.