Scholarlink

<p>One of the main challenges of current metal-oxide-semiconductor field effect transistors (MOSFETs) is the exponential increase in the tunneling- (and leakage-) current through the gate dielectric material while shrinking the gate dielectric material thickness. Over the last two decades, many researchers have attempted to find an alternative material for the gate dielectric of transistors that has the advantages of the current silicon oxide gate dielectric of MOSFETs but without its disadvantages. In the search for an excellent gate dielectric, researchers have compared the key electrical parameters with those of current gate dielectric materials. They applied equations, approaches, and relationships for their evaluations and estimations, which may be incomplete relationships and most likely did not lead to the correct evaluation probability. Among the cases, the great importance is the relationship with the leakage-current from the gate dielectric layer in organic field-effect transistors (OFETs) or thin-film transistors (TFTs). In these discussions and evaluations based on the conventional leakage-current relationship, interactions related to particle exchange and pinch-up displacement in the charge carrier transport channel, particularly the overlap of the wave functions of electrons (or holes) in the channel and at the interface layers, have not been considered. The novelty and specific objectives of the present work are: modifying the Hamiltonian operators based on self-energy (<i>Σ</i>), the retarded Green’s function (<i>G</i><sup>R</sup>), creation (C<sup>+</sup>)/annihilation (C) operators, and the overlapping wave functions of the charge carriers in the gate and substrate systems; obtaining a more complete leakage-current density (<i>J</i>) relationship than the existing relationships; and comparing the electrical characteristics measurement results of five small molecule polymers: PEIE (0.8 nA/cm<sup>2</sup>), Ps (1 nA/cm<sup>2</sup>), PFS (2 nA/cm<sup>2</sup>), ph (4 nA/cm<sup>2</sup>), PMMA (20 nA/cm<sup>2</sup>) with previously reported findings. The obtained results can be highly useful for optimizing organic thin-film transistor formulations for potential use in next-generation nanoelectronic devices with lower energy consumption.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Leakage- and tunneling-current through the gate dielectric of organic thin film transistor using retarded Green’s function, creation and annihilation operators

  • 期刊论文

  • 发表日期：

    2026年4月1日

查看全文
  • Ali Bahari,
  • Mandana Roodbari Shahmiri,
  • Mohammad Bahari

摘要

One of the main challenges of current metal-oxide-semiconductor field effect transistors (MOSFETs) is the exponential increase in the tunneling- (and leakage-) current through the gate dielectric material while shrinking the gate dielectric material thickness. Over the last two decades, many researchers have attempted to find an alternative material for the gate dielectric of transistors that has the advantages of the current silicon oxide gate dielectric of MOSFETs but without its disadvantages. In the search for an excellent gate dielectric, researchers have compared the key electrical parameters with those of current gate dielectric materials. They applied equations, approaches, and relationships for their evaluations and estimations, which may be incomplete relationships and most likely did not lead to the correct evaluation probability. Among the cases, the great importance is the relationship with the leakage-current from the gate dielectric layer in organic field-effect transistors (OFETs) or thin-film transistors (TFTs). In these discussions and evaluations based on the conventional leakage-current relationship, interactions related to particle exchange and pinch-up displacement in the charge carrier transport channel, particularly the overlap of the wave functions of electrons (or holes) in the channel and at the interface layers, have not been considered. The novelty and specific objectives of the present work are: modifying the Hamiltonian operators based on self-energy (Σ), the retarded Green’s function (GR), creation (C+)/annihilation (C) operators, and the overlapping wave functions of the charge carriers in the gate and substrate systems; obtaining a more complete leakage-current density (J) relationship than the existing relationships; and comparing the electrical characteristics measurement results of five small molecule polymers: PEIE (0.8 nA/cm2), Ps (1 nA/cm2), PFS (2 nA/cm2), ph (4 nA/cm2), PMMA (20 nA/cm2) with previously reported findings. The obtained results can be highly useful for optimizing organic thin-film transistor formulations for potential use in next-generation nanoelectronic devices with lower energy consumption.