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<p>The zero-dimensional (0D) ordered lead-free double perovskites (DPs) Cs<sub>2</sub>B<sup>(IV)</sup>X<sub>6</sub> have recently been recognized as promising candidates in the optoelectronics domain. Their exceptional stability and environmentally benign nature position them as ideal alternatives to their toxic and unstable lead-based halide perovskite counterparts. Recent years have witnessed notable progress in the optical properties of Cs<sub>2</sub>B<sup>(IV)</sup>X<sub>6</sub>, propelled by techniques such as ion doping, surface coating and ligand modification, which has been instrumental in broadening their applications in various optoelectronic domains. Herein, a comprehensive overview is provided on the recent progress regarding synthesis methods, optimization strategies, bandgap engineering, photoluminescence (PL) optimization, and device applications related to Cs<sub>2</sub>B<sup>(IV)</sup>X<sub>6</sub> materials. It also explores critical aspects including structural diversity, tunable emission, photophysical mechanisms, and material stability. Moreover, the review addresses the prevailing challenges in this field and outlines future research directions aimed at enhancing the photoluminescence quantum yield and stability of Cs<sub>2</sub>B<sup>(IV)</sup>X<sub>6</sub>.</p>

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Recent progress and prospective of zero-dimensional Cs2B(IV)X6 lead-free double perovskite

  • 期刊论文

  • 发表日期：

    2025年11月1日

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  • Can Hu,
  • Qiao-chu Chen,
  • Guang-sheng Zeng,
  • Hao-zi Lu,
  • Tai-jun Jiang,
  • Si-wei Chen,
  • Yan Su,
  • Ji-zhou Jiang,
  • Song Liu,
  • Jia-liang Jiang

摘要

The zero-dimensional (0D) ordered lead-free double perovskites (DPs) Cs2B(IV)X6 have recently been recognized as promising candidates in the optoelectronics domain. Their exceptional stability and environmentally benign nature position them as ideal alternatives to their toxic and unstable lead-based halide perovskite counterparts. Recent years have witnessed notable progress in the optical properties of Cs2B(IV)X6, propelled by techniques such as ion doping, surface coating and ligand modification, which has been instrumental in broadening their applications in various optoelectronic domains. Herein, a comprehensive overview is provided on the recent progress regarding synthesis methods, optimization strategies, bandgap engineering, photoluminescence (PL) optimization, and device applications related to Cs2B(IV)X6 materials. It also explores critical aspects including structural diversity, tunable emission, photophysical mechanisms, and material stability. Moreover, the review addresses the prevailing challenges in this field and outlines future research directions aimed at enhancing the photoluminescence quantum yield and stability of Cs2B(IV)X6.