<p>Cerium oxide (CeO<sub>2</sub>) is a critical abrasive in chemical mechanical polishing (CMP) due to its chemical-mechanical reactivity and planarization capability. This study developed a controllable hydrothermal synthesis strategy for spherical CeO<sub>2</sub> abrasives and systematically evaluated their CMP performance on silicon wafers. Uniform CeO<sub>2</sub> particles with a fluorite structure were synthesized, as confirmed by scanning electron microscopy, X-ray diffraction, and high-resolution transmission electron microscopy analyses. Mechanistic studies reveal that CeO<sub>2</sub> formation occurred via nitrate-induced oxidation of Ce<sup>3+</sup>. The subsequent precipitation of CeO<sub>2</sub>, coupled with acetate decomposition, thermodynamically drove the reaction forward under hydrothermal conditions. By adjusting water volume, the particle size was precisely tuned from 32 to 531 nm while maintaining excellent sphericity and dispersity. CMP tests showed that 343 nm CeO<sub>2</sub> achieved the highest material removal rate (73.7 nm·min<sup>−1</sup>) with low surface roughness (Ra = 0.31 nm). Optimal polishing with 0.5 wt% CeO<sub>2</sub> achieved a balance between removal efficiency and surface quality, while higher concentrations led to residue defects. Moreover, the hydrothermally synthesized CeO<sub>2</sub> exhibited better CMP performance than commercial abrasives in both short- and long-term polishing, owing to its uniform morphology. Overall, this work demonstrates a simple, effective, and scalable strategy for synthesizing size-controlled CeO<sub>2</sub> abrasives with excellent performance in precision surface processing.</p>

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Controllable synthesis and characterization of spherical CeO2 abrasives for chemical mechanical polishing

  • Chao Fang,
  • Guanghui Shi,
  • Sibin Li,
  • Xiaofeng Xie,
  • Chenghao Liu,
  • Zhi Qi,
  • Peiyu Zhang,
  • Geng Li,
  • Tao Qi,
  • Xiao Wang,
  • Guoping Hu

摘要

Cerium oxide (CeO2) is a critical abrasive in chemical mechanical polishing (CMP) due to its chemical-mechanical reactivity and planarization capability. This study developed a controllable hydrothermal synthesis strategy for spherical CeO2 abrasives and systematically evaluated their CMP performance on silicon wafers. Uniform CeO2 particles with a fluorite structure were synthesized, as confirmed by scanning electron microscopy, X-ray diffraction, and high-resolution transmission electron microscopy analyses. Mechanistic studies reveal that CeO2 formation occurred via nitrate-induced oxidation of Ce3+. The subsequent precipitation of CeO2, coupled with acetate decomposition, thermodynamically drove the reaction forward under hydrothermal conditions. By adjusting water volume, the particle size was precisely tuned from 32 to 531 nm while maintaining excellent sphericity and dispersity. CMP tests showed that 343 nm CeO2 achieved the highest material removal rate (73.7 nm·min−1) with low surface roughness (Ra = 0.31 nm). Optimal polishing with 0.5 wt% CeO2 achieved a balance between removal efficiency and surface quality, while higher concentrations led to residue defects. Moreover, the hydrothermally synthesized CeO2 exhibited better CMP performance than commercial abrasives in both short- and long-term polishing, owing to its uniform morphology. Overall, this work demonstrates a simple, effective, and scalable strategy for synthesizing size-controlled CeO2 abrasives with excellent performance in precision surface processing.