<p>This research article presents the synthesis and characterization of manganese (Mn) doped ZnAl<sub>2</sub>O<sub>4</sub> and Zn(Mg-Al)O<sub>4</sub> composites prepared via a simple one-step sol-gel method followed by sintering at 900&#xa0;°C. The composites exhibit nano-polyhedron morphology and multi-phase crystalline structures confirmed by Field Emission Scanning Electron Microscope (FE-SEM) and X-ray diffraction (XRD), respectively. Optical studies using UV-Vis spectroscopy reveal semiconducting behaviour with band gaps of 1.6&#xa0;eV for ZnAl<sub>2</sub>O<sub>4</sub>/Mn and 1.8&#xa0;eV for Zn(Mg-Al)O<sub>4</sub>/Mn. Microwave absorption properties are investigated in the X-band frequency range (8–12&#xa0;GHz) using a vector network analyzer. Both composites demonstrate narrowband absorption with thickness-insensitive resonance near 10.6&#xa0;GHz, attributed to polarization and domain wall effects. ZnAl<sub>2</sub>O<sub>4</sub>/Mn shows a minimum reflection loss of −14.07 dB with a full-width half maximum (FWHM) of 0.013&#xa0;GHz and a high Q-value of 814.61, indicating its potential for microwave filter applications. Additionally, Zn(Mg-Al)O<sub>4</sub>/Mn exhibits a lower absorption performance due to impedance mismatch. These findings highlight the promising application of Mn-doped spinel composites as efficient narrowband microwave absorbers for advanced electromagnetic interference mitigation and filtering technologies.</p>

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Thickness-insensitive narrowband microwave absorption in Mn-doped ZnAl2O4 and Zn(Mg-Al)O4 spinel nanocomposites

  • Sahil Sharma,
  • Gandi Suman,
  • Sumit Patel,
  • R. Kumaran,
  • V. Subramanian,
  • Saidi Reddy Parne

摘要

This research article presents the synthesis and characterization of manganese (Mn) doped ZnAl2O4 and Zn(Mg-Al)O4 composites prepared via a simple one-step sol-gel method followed by sintering at 900 °C. The composites exhibit nano-polyhedron morphology and multi-phase crystalline structures confirmed by Field Emission Scanning Electron Microscope (FE-SEM) and X-ray diffraction (XRD), respectively. Optical studies using UV-Vis spectroscopy reveal semiconducting behaviour with band gaps of 1.6 eV for ZnAl2O4/Mn and 1.8 eV for Zn(Mg-Al)O4/Mn. Microwave absorption properties are investigated in the X-band frequency range (8–12 GHz) using a vector network analyzer. Both composites demonstrate narrowband absorption with thickness-insensitive resonance near 10.6 GHz, attributed to polarization and domain wall effects. ZnAl2O4/Mn shows a minimum reflection loss of −14.07 dB with a full-width half maximum (FWHM) of 0.013 GHz and a high Q-value of 814.61, indicating its potential for microwave filter applications. Additionally, Zn(Mg-Al)O4/Mn exhibits a lower absorption performance due to impedance mismatch. These findings highlight the promising application of Mn-doped spinel composites as efficient narrowband microwave absorbers for advanced electromagnetic interference mitigation and filtering technologies.