Large-Scale Delayering of Semiconductor Devices with Nanometer-Scale Uniformity over a Millimeter-Scale Area
摘要
A fully integrated solution for millimeter-scale delayering of logic and memory semiconductor devices is presented. The innovative technology employs a 0.5 mm wide argon ion beam that scans the sample surface in the X–X direction. The flatness of the delayered area is controlled by an algorithm that uses feedback from multiple analytical detectors to control milling parameter adjustments in real time. The result is the precise removal of thin device layers and a highly planar surface—up to 10 mm in diameter with a uniformity of better than 50 nm.