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<p>This work employs SCAPS-1D simulations to comprehensively investigate the characteristic footprints of optimal layer configuration and bandgap grading on the performance of CIGS-based thin-film solar cells (TFSCs). Among the investigated bandgap grading schemes across the vertically stepped absorber layer, the W-shaped profile yields the highest power conversion efficiency, followed by back-graded, V-shaped, and front-graded configurations. Our simulated novel Cd-free device architecture, [Al/FTO/SnS<sub>2</sub>/W-shaped stepped CIGS/V<sub>2</sub>O<sub>5</sub>/Ni], achieves a peak simulated efficiency of 32.49% with V<sub>OC</sub>, J<sub>SC</sub> and FF of 1.06&#xa0;V, 34.66&#xa0;mA/cm<sup>2</sup> and 88.68%, respectively, representing the upper theoretical performance limit under idealized conditions. The analysis indicates that increasing the absorber defect density, interfacial defect density and operating temperature detrimentally affects device output, with defects at the buffer/absorber interface producing a more pronounced influence than those at the absorber/BSF junction. A detailed comparison of photovoltaic characteristics of graded and ungraded CIGS-based TFSCs with identical layouts demonstrates that absorber layer thickness plays a more effective role in determining the efficiency of graded devices. Markedly, the ungraded CIGS TFSCs exhibit enhanced stability under concurrent increases in defects and operating temperature as compared to their graded counterparts. Under ambient conditions, the performance of optimized graded cell with 1.5&#xa0;µm absorber layer is comparable to an ungraded device having reduced absorber layer thickness of 1.3&#xa0;µm in the wavelength range (300-730&#xa0;nm) while it is higher in the longer or infrared wavelength range (&gt;730&#xa0;nm). Overall, these findings highlight that while W-shaped bandgap grading maximizes the theoretical efficiency, ungraded architectures offer superior cost-effectiveness, stability and device-lifetime, making them more viable for the large-scale production of Cd-free CIGS-based thin-film solar cells.</p>

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SCAPS-1D Optimization of CIGS Thin-Film Solar Cells through Layer Engineering and Bandgap Grading

  • 期刊论文

  • 发表日期：

    2026年7月17日

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  • Aditya Verma,
  • Aashika Srivastava,
  • Shreyashi Srivastava,
  • Tista Basak

摘要

This work employs SCAPS-1D simulations to comprehensively investigate the characteristic footprints of optimal layer configuration and bandgap grading on the performance of CIGS-based thin-film solar cells (TFSCs). Among the investigated bandgap grading schemes across the vertically stepped absorber layer, the W-shaped profile yields the highest power conversion efficiency, followed by back-graded, V-shaped, and front-graded configurations. Our simulated novel Cd-free device architecture, [Al/FTO/SnS2/W-shaped stepped CIGS/V2O5/Ni], achieves a peak simulated efficiency of 32.49% with VOC, JSC and FF of 1.06 V, 34.66 mA/cm2 and 88.68%, respectively, representing the upper theoretical performance limit under idealized conditions. The analysis indicates that increasing the absorber defect density, interfacial defect density and operating temperature detrimentally affects device output, with defects at the buffer/absorber interface producing a more pronounced influence than those at the absorber/BSF junction. A detailed comparison of photovoltaic characteristics of graded and ungraded CIGS-based TFSCs with identical layouts demonstrates that absorber layer thickness plays a more effective role in determining the efficiency of graded devices. Markedly, the ungraded CIGS TFSCs exhibit enhanced stability under concurrent increases in defects and operating temperature as compared to their graded counterparts. Under ambient conditions, the performance of optimized graded cell with 1.5 µm absorber layer is comparable to an ungraded device having reduced absorber layer thickness of 1.3 µm in the wavelength range (300-730 nm) while it is higher in the longer or infrared wavelength range (>730 nm). Overall, these findings highlight that while W-shaped bandgap grading maximizes the theoretical efficiency, ungraded architectures offer superior cost-effectiveness, stability and device-lifetime, making them more viable for the large-scale production of Cd-free CIGS-based thin-film solar cells.