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<p>Silicon carbide fiber-reinforced titanium matrix composite (SiC<sub>f</sub>/Ti17) materials exhibit excellent mechanical properties and are considered to be promising lightweight high-temperature structural materials for aerospace applications. However, thermal residual stresses inevitably develop at the interfaces due to the thermal-expansion mismatch, critically affecting material reliability. This study reveals the evolution mechanism of interfacial residual stresses in SiC<sub>f</sub>/Ti17 composites up to 1050&#xa0;°C by quantitatively characterizing the strain fields via high-frequency gratings (8000&#xa0;lines/mm) and finite element inversion. The results demonstrate a&#xa0;non-monotonic evolution&#xa0;of residual stress at the W/SiC interface: The compressive stress decreases gradually below 850&#xa0;°C due to stress relaxation but increases sharply at 1050&#xa0;°C, indicating a significant stress accumulation risk. More notably, a stress inversion phenomenon was identified in the C coating interface layer, where the initial tensile stress transforms into compressive stress at 1050&#xa0;°C. This transition implies a degradation in the interface’s energy-buffering capacity and toughening mechanism. The findings confirm that 1050&#xa0;°C serves as a critical threshold where stress concentration triggers microstructural instability, providing a theoretical basis for the failure prediction and interface optimization of SiC<sub>f</sub>/Ti17 composites.</p>

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Study on Residual Stress Evolution of SiCf/Ti17 Composites Based on High-Frequency Grating

  • 期刊论文

  • 发表日期：

    2026年7月16日

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  • Yang Yang,
  • Jiahao Li,
  • Shuyang Tang,
  • Gaosheng Yan,
  • Yutian Han,
  • Xinwen Chen,
  • Yuhuai He,
  • Hongye Zhang

摘要

Silicon carbide fiber-reinforced titanium matrix composite (SiCf/Ti17) materials exhibit excellent mechanical properties and are considered to be promising lightweight high-temperature structural materials for aerospace applications. However, thermal residual stresses inevitably develop at the interfaces due to the thermal-expansion mismatch, critically affecting material reliability. This study reveals the evolution mechanism of interfacial residual stresses in SiCf/Ti17 composites up to 1050 °C by quantitatively characterizing the strain fields via high-frequency gratings (8000 lines/mm) and finite element inversion. The results demonstrate a non-monotonic evolution of residual stress at the W/SiC interface: The compressive stress decreases gradually below 850 °C due to stress relaxation but increases sharply at 1050 °C, indicating a significant stress accumulation risk. More notably, a stress inversion phenomenon was identified in the C coating interface layer, where the initial tensile stress transforms into compressive stress at 1050 °C. This transition implies a degradation in the interface’s energy-buffering capacity and toughening mechanism. The findings confirm that 1050 °C serves as a critical threshold where stress concentration triggers microstructural instability, providing a theoretical basis for the failure prediction and interface optimization of SiCf/Ti17 composites.