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<p>In this study, the preparation, the Si infiltration densification treatment and the surface treatment of recrystallized SiC (RSiC) substrate were initial completed. Scanning electron microscopy (SEM) and x‐ray diffraction (XRD) were applied to observe the surface morphology and microstructure of RSiC substrate before and after the above steps of treatment. Then, the 3C‐SiC coating with the porous interface layer was prepared on the RSiC substrate using chemical vapor deposition (CVD) method. The purity of the 3C‐SiC coating was detected by high resolution glow discharge mass spectrometry (HR‐GDMS) for all elements (75 elements) content, and the results showed that the purity of the 3C‐SiC coating reached 99.99901%. Subsequently, XRD, SEM, and electron channeling contrast imaging (ECCI) were used to characterize the microstructure of the 3C‐SiC coating. In addition, the line scanning mode of Raman spectroscopy was used to obtain the structural transformation of the 3C‐SiC coating in the depth direction. Finally, the adhesion strength of the 3C‐SiC coating tested through pull‐out experiments exceeded 30&#xa0;MPa, and the results of thermal cycling experiments showed that the 3C‐SiC coating had good thermal shock resistance.</p>

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Preparation of High Purity 3C‐SiC Coating on RSiC Substrate Used for the Boat in Semiconductor Diffusion and Annealing Processes by Chemical Vapor Deposition Method

  • 期刊论文

  • 发表日期：

    2026年5月11日

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  • Weichen Jing,
  • Renfei Cheng,
  • Chao Zhang,
  • Xiaohui Wang,
  • Mingqiang Tang

摘要

In this study, the preparation, the Si infiltration densification treatment and the surface treatment of recrystallized SiC (RSiC) substrate were initial completed. Scanning electron microscopy (SEM) and x‐ray diffraction (XRD) were applied to observe the surface morphology and microstructure of RSiC substrate before and after the above steps of treatment. Then, the 3C‐SiC coating with the porous interface layer was prepared on the RSiC substrate using chemical vapor deposition (CVD) method. The purity of the 3C‐SiC coating was detected by high resolution glow discharge mass spectrometry (HR‐GDMS) for all elements (75 elements) content, and the results showed that the purity of the 3C‐SiC coating reached 99.99901%. Subsequently, XRD, SEM, and electron channeling contrast imaging (ECCI) were used to characterize the microstructure of the 3C‐SiC coating. In addition, the line scanning mode of Raman spectroscopy was used to obtain the structural transformation of the 3C‐SiC coating in the depth direction. Finally, the adhesion strength of the 3C‐SiC coating tested through pull‐out experiments exceeded 30 MPa, and the results of thermal cycling experiments showed that the 3C‐SiC coating had good thermal shock resistance.