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<p>The mechanical properties and deformation behavior of 4H-SiC crystals were systematically investigated using nanoindentation experiments combined with molecular dynamics (MD) simulations to elucidate their strain rate dependence. The results showed that increasing the strain rate resulted in a reduced critical load and a shallower elastic–plastic transition depth, accompanied by enhanced hardness and elastic modulus but decreased fracture toughness and elastic recovery rate. MD simulations further revealed that high strain rate loading accelerated stress accumulation and suppressed dislocation motion, leading to dislocation structures with high density but limited extension. In addition, higher strain rates promoted the plasticity transition from dislocations to phase transitions. These findings provide important insights of strain rate-dependent deformation and failure mechanisms in 4H-SiC crystals, offering valuable guidance for optimizing ductile machining strategies of hard and brittle semiconductors.</p>

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Strain Rate Dependence of Mechanical Properties and Deformation Behavior in Nanoindentation of 4H-SiC Crystals

  • 期刊论文

  • 发表日期：

    2026年3月26日

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  • Kechong Wang,
  • Zhiyuan Xiong,
  • Aoyuan Gao,
  • Oleg Zakharov,
  • Chen Li

摘要

The mechanical properties and deformation behavior of 4H-SiC crystals were systematically investigated using nanoindentation experiments combined with molecular dynamics (MD) simulations to elucidate their strain rate dependence. The results showed that increasing the strain rate resulted in a reduced critical load and a shallower elastic–plastic transition depth, accompanied by enhanced hardness and elastic modulus but decreased fracture toughness and elastic recovery rate. MD simulations further revealed that high strain rate loading accelerated stress accumulation and suppressed dislocation motion, leading to dislocation structures with high density but limited extension. In addition, higher strain rates promoted the plasticity transition from dislocations to phase transitions. These findings provide important insights of strain rate-dependent deformation and failure mechanisms in 4H-SiC crystals, offering valuable guidance for optimizing ductile machining strategies of hard and brittle semiconductors.