Microstructural and Defect-Driven Enhancement of Electrical Insulation in Cr2O3/ZnO Composite-Coated Al2O3 Ceramics
摘要
This study investigates Cr2O3/ZnO composite coatings as a surface-engineering strategy to enhance the electrical insulation performance of Al2O3 ceramics. Coatings containing 0.015, 0.025, 0.035, and 0.045 mol ZnO (denoted Z1–Z4) were fabricated by screen printing and sintered to form dense Cr2O3-based layers partially integrated with the alumina substrate. Comprehensive microstructural, chemical, and electrical analyses reveal a strongly non-monotonic dependence of insulation behavior on ZnO loading. At low additions (Z1 and Z2), Zn2+ incorporates substitutionally into the corundum lattice, generating shallow traps and only modest dielectric enhancement. At intermediate content (Z3), the system enters a defect-saturated regime characterized by extensive oxygen-vacancy formation, pore coarsening, and heterogeneous interfaces, resulting in the highest trap density and strongest charge-retention capability, but also excessive leakage. At higher ZnO levels (Z4), segregation of wurtzite ZnO relieves lattice strain, reduces vacancy clustering, and interrupts defect-assisted conduction pathways. This structural recovery produces a more balanced electrical response, where moderated trap density is accompanied by reduced leakage and improved resistive stability, identifying Z4 as the most reliable composition for sustained high-field insulation rather than simply the maximum trap state. The results establish composition–structure–property guidelines for designing multi-oxide coatings with tunable defect chemistry and stable electrical performance.