Chemical Mechanical Polishing of Glass Using Al- and Zr-Doped Rare-Earth Abrasives
摘要
In glass chemical–mechanical polishing (CMP), the primary challenge lies in balancing the material removal rate (MRR) with achieving low surface roughness, while also overcoming the limitations of pure CeO2 polishing powders, such as insufficient chemical reactivity and the difficulty of controlling particle morphology. In this work, Al and Zr doping are employed to regulate the crystal structure of CeO2, inducing lattice contraction and synergistically increasing the concentrations of Ce3+ and oxygen vacancies to enhance chemical activity, while additional fluorine doping is used to further optimize particle morphology. The results show that 10% Al-doping yields the highest Ce3+and oxygen-vacancy concentrations, reaching 42.18% and 14.01%, respectively, corresponding to a material removal rate of 0.6413 mg/(cm2·min), which increases to 0.6715 mg/(cm2·min) after 6% F doping. For 6% Zr doping, the removal rate is 0.6366 mg/(cm2·min), with a slight increase to 0.6431 mg/(cm2·min) after fluorine incorporation. The CMP mechanism can be attributed to the synergistic enhancement of surface chemical reactivity arising from the dopant-induced high concentrations of Ce3+ and oxygen vacancies, which promote the breaking of Si-O bonds on the glass surface, followed by mechanical abrasion to achieve efficient material removal.