Temperature-Driven Phase Evolution in Vanadium Oxide Thin Films: Correlating Structural, XPS and DC Resistivity
摘要
Vanadium is a versatile transition metal known for multiple phase transitions, which broaden its potential for advanced applications. Yet, comprehensive insight into phase evolution as a function of deposition temperature remains limited. In this study, vanadium oxide thin films were synthesized using a combinatorial Chemical Beam Vapor Deposition (CBVD) technique at six substrate temperatures (350-600 °C). Structural and microstructural characterization by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and energy-dispersive x-ray spectroscopy (EDX) revealed a temperature-driven transformation from orthorhombic V2O5 to monoclinic VO2, with intermediate mixed-valence phases such as V3O7. The films exhibited pronounced morphological evolution, ranging from nanoribbon-like features at lower temperatures to compact granular structures and re-emergent nanorods at higher temperatures. DC resistivity displayed a strong dependence on deposition temperature, with nonlinear, threshold-type switching at 500 °C and lower, more stable resistivity at 550-600 °C, consistent with VO2-rich phases. x-ray photoelectron spectroscopy (XPS) further confirmed a progressive increase of V5+ relative to V4+ with deposition temperature, reflecting near-surface oxidation, while Raman and resistivity emphasized bulk-driven phase evolution. Together, these findings establish direct correlations between deposition temperature, structure, surface chemistry, and electrical behavior, underscoring the tunability of VOx thin films for memory devices, selectors, sensors, and related applications.