<p>Mo-Si-B composite coating was successfully prepared on molybdenum substrate by a two-step molten salt electrodeposition, including boronizing and siliconizing. The high-temperature oxidation behavior of Mo-Si-B composite coating was evaluated. The results showed that Mo-Si-B composite coatings prepared under different siliconizing times all presented a double-layer structure with an inner boride layer and an outer silicide layer. The inner boride layer could function as a diffusion barrier to limit the internal diffusion of silicon since the thickness of the outer silicide layer in the composite coating was much less than that of the silicide coating deposited directly on molybdenum. A continuous and dense SiO<sub>2</sub>-B<sub>2</sub>O<sub>3</sub> composite oxide film was formed on the surface of Mo-Si-B coating after oxidation at 1000&#xa0;°C, which could effectively block the further entry of oxygen. The original boride layer and Mo<sub>5</sub>SiB<sub>2</sub> layer formed during oxidation could hinder the internal diffusion of Si and inhibit the degradation of MoSi<sub>2</sub>.</p>

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Effect of Boride Diffusion Barrier on High-Temperature Oxidation Behavior of Electrodeposited Mo-Si-B Composite Coating

  • Yalong Zhang,
  • Qian Wang,
  • Mingyang Hong,
  • Junwei Zhang

摘要

Mo-Si-B composite coating was successfully prepared on molybdenum substrate by a two-step molten salt electrodeposition, including boronizing and siliconizing. The high-temperature oxidation behavior of Mo-Si-B composite coating was evaluated. The results showed that Mo-Si-B composite coatings prepared under different siliconizing times all presented a double-layer structure with an inner boride layer and an outer silicide layer. The inner boride layer could function as a diffusion barrier to limit the internal diffusion of silicon since the thickness of the outer silicide layer in the composite coating was much less than that of the silicide coating deposited directly on molybdenum. A continuous and dense SiO2-B2O3 composite oxide film was formed on the surface of Mo-Si-B coating after oxidation at 1000 °C, which could effectively block the further entry of oxygen. The original boride layer and Mo5SiB2 layer formed during oxidation could hinder the internal diffusion of Si and inhibit the degradation of MoSi2.