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<p>Ag-doped In<sub>0.5</sub>Ga<sub>0.5</sub>Sb bulk crystalline alloys were synthesized and examined for thermoelectric applications. Silver nanoparticles were included in the previously prepared In<sub>0.5</sub>Ga<sub>0.5</sub>Sb bulk alloy. Ag-doped In<sub>0.5</sub>Ga<sub>0.5</sub>Sb (x = 0,0 − 0.25 at. %) samples have been synthesized via direct mono-temperature melting. The melting process was carried out for a mix of precursors (In, Ga, Sb powders without and with Ag nanoparticles) in evacuated silica tubes at a temperature of 1273&#xa0;K for 10 hours. The synthesized materials have been annealed at 300&#xa0;°C for 4 h and then examined by x-ray diffraction (XRD), scanning electron microscope (SEM), and transmission electron microscope (TEM). Ag incorporation effectively tuned carrier concentration and improved electrical transport, while also reducing thermal conductivity through enhanced phonon scattering. These combined effects led to an overall enhancement in thermoelectric performance. Incorporation of the Ag nanoparticles resulted in higher electrical conductivity and lower Seebeck coefficient. It was found that PF increases for all samples, reaching a maximum value and decreasing again thereafter. The pristine In<sub>0.5</sub>Ga<sub>0.5</sub>Sb sample showed room temperature power factor (PF) equal to 13.5&#xa0;×&#xa0;10<sup>2</sup>&#xa0;μW/K<sup>2</sup>.m, which increased with the temperature increasing to 37.2&#xa0;×&#xa0;10<sup>2</sup>&#xa0;μW/K<sup>2</sup>.m at 463&#xa0;K. The maximum PF was recorded at 40.5&#xa0;×&#xa0;10<sup>2</sup>&#xa0;µW/K<sup>2</sup>.m for In<sub>0.5</sub>Ga<sub>0.5</sub>Sb/Ag-NPs<sub>0.5</sub> alloy, observed at 423&#xa0;K. Although the power factor was enhanced for some Ag-doped In<sub>0.5</sub>Ga<sub>0.5</sub>Sb alloys in comparison with the parent In<sub>0.5</sub>Ga<sub>0.5</sub>Sb alloy, the figure of merit (ZT) did not increase by Ag-NPs<sub>x</sub> incorporation. ZT is reduced after Ag-NPs incorporation because of the reduction in the Seebeck coefficient resulting from the increased carrier concentration alongside the increased thermal conductivity. The maximum ZT is observed at 0.66 for In<sub>0.5</sub>Ga<sub>0.5</sub>Sb alloy at 473&#xa0;K. The results suggest that Ag-doped In<sub>0.5</sub>Ga<sub>0.5</sub>Sb alloys are promising candidates for efficient energy conversion materials.</p>

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Thermoelectric Properties of Ag-Doped Polycrystalline In0.5Ga0.5Sb Alloys

  • 期刊论文

  • 发表日期：

    2025年11月17日

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  • Z. M. H. El-Qahtani,
  • P. Petkov,
  • A. K. Diab,
  • A. M. Adam,
  • M. Ataalla,
  • H. F. Khalil

摘要

Ag-doped In0.5Ga0.5Sb bulk crystalline alloys were synthesized and examined for thermoelectric applications. Silver nanoparticles were included in the previously prepared In0.5Ga0.5Sb bulk alloy. Ag-doped In0.5Ga0.5Sb (x = 0,0 − 0.25 at. %) samples have been synthesized via direct mono-temperature melting. The melting process was carried out for a mix of precursors (In, Ga, Sb powders without and with Ag nanoparticles) in evacuated silica tubes at a temperature of 1273 K for 10 hours. The synthesized materials have been annealed at 300 °C for 4 h and then examined by x-ray diffraction (XRD), scanning electron microscope (SEM), and transmission electron microscope (TEM). Ag incorporation effectively tuned carrier concentration and improved electrical transport, while also reducing thermal conductivity through enhanced phonon scattering. These combined effects led to an overall enhancement in thermoelectric performance. Incorporation of the Ag nanoparticles resulted in higher electrical conductivity and lower Seebeck coefficient. It was found that PF increases for all samples, reaching a maximum value and decreasing again thereafter. The pristine In0.5Ga0.5Sb sample showed room temperature power factor (PF) equal to 13.5 × 102 μW/K2.m, which increased with the temperature increasing to 37.2 × 102 μW/K2.m at 463 K. The maximum PF was recorded at 40.5 × 102 µW/K2.m for In0.5Ga0.5Sb/Ag-NPs0.5 alloy, observed at 423 K. Although the power factor was enhanced for some Ag-doped In0.5Ga0.5Sb alloys in comparison with the parent In0.5Ga0.5Sb alloy, the figure of merit (ZT) did not increase by Ag-NPsx incorporation. ZT is reduced after Ag-NPs incorporation because of the reduction in the Seebeck coefficient resulting from the increased carrier concentration alongside the increased thermal conductivity. The maximum ZT is observed at 0.66 for In0.5Ga0.5Sb alloy at 473 K. The results suggest that Ag-doped In0.5Ga0.5Sb alloys are promising candidates for efficient energy conversion materials.