Scholarlink

<p>The MoSi<sub>2</sub> self-healing thermal barrier coating with a compact structure and high surface silicon content was deposited on Mo surface by hot dip silicon-plating (HDS) method. The oxidation behavior and antioxidant mechanism of the coating at 1500&#xa0;°C were systematically investigated. The results indicate that the coating has a very extremely smooth surface, the average surface roughness (RSa) and surface area growth rate (Sdr) are 0.288&#xa0;μm and 3.393%, respectively. After exposed at 1500&#xa0;°C for 4&#xa0;h, the thicknesses of oxide layer and interfacial layer were reached to 15 and 64&#xa0;μm, and the per unit area weight change rate (<i>M</i><sub><i>c</i></sub>) and oxidation rate constant (<i>k</i><sub><i>p</i></sub>) are 12.43&#xa0;mg/cm<sup>2</sup> and 1.12 × 10<sup>−2</sup> mg<sup>2</sup>&#xa0;cm<sup>−4</sup>&#xa0;s<sup>−1</sup>, respectively. The maximum RSa and Sdr values are obtained after 1&#xa0;h of oxidation, and then gradually decreased with the increase of oxidation time. The cracks and holes defects in the oxide layer are gradually healed with the increase of oxidation time, and the coating surface was covered by a smooth continuous SiO<sub>2</sub> glass layer. The thermal barrier coating exhibits good high-temperature oxidation resistance, which is mainly dependent on its dense coating structure, high surface silicon concentration, and good self-healing ability.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Formation and Oxidation Behavior of Hot-Dip Silicon MoSi2 Self-Healing Thermal Barrier Coating on Mo Substrate at 1500 °C

  • 期刊论文

  • 发表日期：

    2025年4月14日

查看全文
  • Yingyi Zhang,
  • Junjie Zhu,
  • Tao Fu,
  • Shuren Zhan

摘要

The MoSi2 self-healing thermal barrier coating with a compact structure and high surface silicon content was deposited on Mo surface by hot dip silicon-plating (HDS) method. The oxidation behavior and antioxidant mechanism of the coating at 1500 °C were systematically investigated. The results indicate that the coating has a very extremely smooth surface, the average surface roughness (RSa) and surface area growth rate (Sdr) are 0.288 μm and 3.393%, respectively. After exposed at 1500 °C for 4 h, the thicknesses of oxide layer and interfacial layer were reached to 15 and 64 μm, and the per unit area weight change rate (Mc) and oxidation rate constant (kp) are 12.43 mg/cm2 and 1.12 × 10−2 mg2 cm−4 s−1, respectively. The maximum RSa and Sdr values are obtained after 1 h of oxidation, and then gradually decreased with the increase of oxidation time. The cracks and holes defects in the oxide layer are gradually healed with the increase of oxidation time, and the coating surface was covered by a smooth continuous SiO2 glass layer. The thermal barrier coating exhibits good high-temperature oxidation resistance, which is mainly dependent on its dense coating structure, high surface silicon concentration, and good self-healing ability.