Characteristics of Single-Crystal Diamond under Intermittent Growth: Step Flow Evolution and Stress Defect Analysis
摘要
In this study, the defect interplay between the seed and the epitaxial layer and the investigation of the growth and evolution of step flow within the defect region was elucidated under the conditions of intermittent growth. Analysis of Raman spectroscopy and photoluminescence spectroscopy reveals significant alterations in both the bonding configurations and concentrations of nitrogen-related defects within the epitaxial layer compared to those present in the seed crystal following prolonged intermittent growth periods. The dislocation densities within the epitaxial layer and the seed have been quantified as 1.12 × 107 and 3.63 × 107 cm−2, suggesting that the intermittent growth strategy contributes positively toward reducing the dislocation density of the epitaxial layer.