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<p>Transition metal oxide semiconductors have attracted considerable attention due to their tunable physical properties and potential in next-generation optoelectronic devices. In this work, nickel-doped copper oxide (Cu<sub>(1−<i>x</i>)</sub>Ni<sub><i>x</i></sub>O) thin films were successfully synthesised by chemical spray pyrolysis at a substrate temperature of 350°C. Nickel incorporation was achieved by introducing varying concentrations (0.5&#xa0;wt.%, 1&#xa0;wt.%, 2&#xa0;wt.%, and 3&#xa0;wt.%) of nickel acetate monohydrate into the CuO precursor solution. X-ray diffraction (XRD) confirmed the formation of a single-phase monoclinic CuO lattice, indicative of the tenorite structure in both pure and Ni-doped films. Surface morphology examined through scanning electron microscopy (SEM) revealed uniformly distributed, densely packed grains, while x-ray photoelectron spectroscopy (XPS) confirmed Cu<sup>2+</sup> as the predominant oxidation state along with substitutional Ni<sup>2+</sup> doping. Optical studies demonstrated a gradual increase in transmittance and a widening of the optical bandgap from 2.20&#xa0;eV to 3.83&#xa0;eV with increasing Ni content, suggesting the modulation of defect states and carrier concentration. Photoluminescence analysis further indicated enhanced defect-assisted charge transfer processes within the doped films. The minimum electrical resistivity (0.59 × 10<sup>3</sup>&#xa0;Ω·cm) was achieved for the 0.5&#xa0;wt.% Ni-doped sample, highlighting its superior charge transport characteristics. These results collectively demonstrate that controlled nickel doping effectively tailors the structural, optical, and electrical properties of CuO thin films, making them promising candidates for optoelectronic and sensing applications.</p>

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Tuning the Optoelectronic Properties of Cu(1−x)NixO Thin Films Synthesised by Spray Pyrolysis

  • 期刊论文

  • 发表日期：

    2026年7月27日

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  • R. Shabu,
  • J.T. Anandhi,
  • A.R. Baby Suganthi,
  • Mary Anjalin Francis

摘要

Transition metal oxide semiconductors have attracted considerable attention due to their tunable physical properties and potential in next-generation optoelectronic devices. In this work, nickel-doped copper oxide (Cu(1−x)NixO) thin films were successfully synthesised by chemical spray pyrolysis at a substrate temperature of 350°C. Nickel incorporation was achieved by introducing varying concentrations (0.5 wt.%, 1 wt.%, 2 wt.%, and 3 wt.%) of nickel acetate monohydrate into the CuO precursor solution. X-ray diffraction (XRD) confirmed the formation of a single-phase monoclinic CuO lattice, indicative of the tenorite structure in both pure and Ni-doped films. Surface morphology examined through scanning electron microscopy (SEM) revealed uniformly distributed, densely packed grains, while x-ray photoelectron spectroscopy (XPS) confirmed Cu2+ as the predominant oxidation state along with substitutional Ni2+ doping. Optical studies demonstrated a gradual increase in transmittance and a widening of the optical bandgap from 2.20 eV to 3.83 eV with increasing Ni content, suggesting the modulation of defect states and carrier concentration. Photoluminescence analysis further indicated enhanced defect-assisted charge transfer processes within the doped films. The minimum electrical resistivity (0.59 × 103 Ω·cm) was achieved for the 0.5 wt.% Ni-doped sample, highlighting its superior charge transport characteristics. These results collectively demonstrate that controlled nickel doping effectively tailors the structural, optical, and electrical properties of CuO thin films, making them promising candidates for optoelectronic and sensing applications.